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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Bougnot »
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G. Boudebs < G. Bougnot < G. Boulon  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001E19 (1996-04) Etude du procédé Bridgman vertical appliqué à la croissance de monocristaux semi-conducteurs «trois-cinq» «grand diamètre»
001F56 (1996) Electrical characteristics of GaIn(As)Sb layers grown by metal organic vapor phase epitaxy
002038 (1995-07) Réalisation par EPVOM d'hétérostructures à base d'antimoniures sur GaAs: application au photoconducteur à 4 micromètres
002190 (1995) Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates
002251 (1994-10) Dépôt par MOCVD de couches minces de CuInSe2 pour la conversion photovoltaïque de l'énergie solaire
002269 (1994-07) Elaboration par E.P.V.O.M. d'un photodétecteur A Ga1-xInxSb et Ga1-xInxAsySb1-y pour télécommunications à plus de deux micromètres
002663 (1993) Growth and characterization of n-type (Te) doped metal organic vapor phase epitaxy GaInSb
002849 (1992) MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection
002850 (1992) MOCVD growth of CuInSe2 : first results
002874 (1992) InGaSb/GaSb photodiodes growth by MOVPE
002A18 (1991) Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers
002D94 (1988) Growth of GaInAsSb alloys by MOCVD and characterization of GaInAsSb/GaSb p-n photodiodes

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
8Organometallic compound
7Epitaxy
6Growth from vapor
6Thin film
5Gallium Indium Antimonides Mixed
5Inorganic compound
4Semiconductor materials
4Ternary compounds
3Characterization
3Chemical vapor deposition
3Crystal growth
3Gallium antimonides
3Indium antimonides
3Photodiode
3X ray diffraction
2Binary compounds
2Buffer layer
2Carrier density
2Charge carrier concentration
2Chemical composition
2Electrical properties
2Gallium arsenides
2Heterojunction
2Homojunction
2Indium arsenides
2Mismatch lattice
2Optical properties
2Optical transmission
2Photodetector
2Solar cell
2Solid solution
2Ternary compound
2VPE
1Antimonides arsenides
1Application
1Binary compound
1Bridgman method
1Carrier mobility
1Charge carrier mobility
1Controlled atmosphere
1Copper Selenides
1Crucibles
1Crystal growth from melts
1Crystal growth from vapors
1Crystal perfection
1Dislocation density
1Doping
1Energy band
1Epitaxial layers
1Fabrication property relation
1Gallium Antimonides
1Gallium Arsenides
1Gallium Indium Antimonides arsenides Mixed
1Growth interface
1Hall effect
1Heterojunctions
1Heterostructures
1Holes
1III-V compound
1III-V semiconductors
1IV characteristic
1Indium Antimonides
1Indium Antimonides arsenides
1Indium Selenides
1Indium compounds
1Infrared detection
1Infrared radiation
1Interband transitions
1Kinetics
1Laser
1Liquid encapsulation
1Liquid solid interface
1MOCVD
1Manufacturing process
1Microelectronic fabrication
1Microstructure
1Mobility
1Morphology
1Noise criterion
1Numerical simulation
1Operating mode
1Optical microscopy
1Optical telecommunication
1Organometallic compounds
1Passivation
1Performance analysis
1Phase diagram
1Photoconductivity
1Photoconductors
1Photovoltaic conversion
1Precursor
1Pressure
1Quantity ratio
1Quaternary compound
1Quaternary compounds
1Radiation detection
1Reactor
1Scanning electron microscopy
1Secondary ion mass spectrometry

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