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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « G. Biskupski »
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G. Bidan < G. Biskupski < G. Bisognin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000371 (2009) Variable range hopping conductivity and negative magnetoresistance in n-type InP semiconductor
000B85 (2004) Analysis of the behaviour of magnitude m with magnetic field in corrective term "mT1/2" of the metallic electrical conductivity in n-type InP
000D09 (2003) Positive and negative magnetoresistance on both sides of the metal-insulator transition in metallic n-type InP
001197 (2001) Negative magnetoresistance in metallic n-type InP
001678 (1999) Positive magnetoresistance in the variable range hopping regime in metallic n-type InP
001705 (1999) Localisation and interaction effects in metallic n-type InP
001871 (1998-05) Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption
001900 (1998) Théorie d'échelle appliquée à la transition métal-isolant dans l InP de type n
001D12 (1997) Analysis of the behaviour of electrical conductivity with magnetic field in n-type InP
001D18 (1997) A criterion to distinguish the contribution of the localisation and interaction effects to the T1/2 dependence of the conductivity in n-type InP
002763 (1992-06) Mécanismes de conduction à basse température au voisinage de la transition métal-isolant dans le phosphure d'indium
002969 (1991) The temperature dependence of the inelastic scattering time in metallic n-InP
002A58 (1991) Critical behaviour of the conductivity in metallic n-type InP close to the metal-insulator transition
002D27 (1988) Variable-range hopping and Coulomb gap in indium phosphide
002F87 (1986) The Anderson transition in a magnetic field: experimental evidence for a new phase diagram
003108 (1984) Magnetic field-induced metal-insulator transition in InP: new result at very low temperatures

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
8Indium phosphides
7Electrical conductivity
6Metal-insulator transition
6Semiconductor materials
5Electron-electron interactions
5Indium Phosphides
5Inorganic compound
5Magnetic field
5Magnetic field effects
5Metal insulator transition
4Inelastic scattering
4Magnetoresistance
4n-type conductors
3Binary compounds
3Magnetoconductivity
3Negative magnetoresistance
3Temperature
3Theoretical study
3Very low temperature
3Weak localisation
2Hopping conduction
2Hopping conductivity
2Low temperature
2Metallic conduction
2Temperature dependence
2Weak localization
1Anderson transition
1Binary compound
1Charge carrier scattering
1Charge compensation
1Compensated semiconductor
1Critical phenomenon
1Critical point
1Density of states
1Donor center
1Electrical characteristic
1Electromagnetic wave absorption
1Electron interaction
1Electron localization
1Electronic transition
1Energy-level splitting
1Exchange interactions
1III-V semiconductors
1Impurity density
1Indium compounds
1Indium phosphide
1Linear regression
1Low field
1Mott transition
1N type conductivity
1Quantum interference
1Scaling law
1Scaling laws
1Strong fields
1Thermal behavior
1n type semiconductor

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