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Index « Auteurs » - entrée « G. Bacquet »
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G. Bachelier < G. Bacquet < G. Bahir  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
001686 (1999) Optical characterization of bulk CuIn3Se5
001957 (1998) Photoluminescence in p-type CuInSe2 single crystals
001A07 (1998) Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 K
001A65 (1997-11-01) Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2
002141 (1995) Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C
002155 (1995) Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP
002282 (1994-06) Etude par pompage optique de puits quantiques contraints Ga1-xInxAs/GaAs
002352 (1994) Spin orientation by optical pumping in InxGa1-xAs/AlAs multiple quantum wells
002552 (1993) Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates
002553 (1993) Spin orientation by optical pumping in strained InxGa1-xAs/GaAs quantum wells
002593 (1993) Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002810 (1992) Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells
003009 (1986) Luminescence of heavily electron irradiated InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Photoluminescence
12Experimental study
8Semiconductor materials
7Ternary compounds
6Gallium arsenides
6Indium arsenides
5Excitons
5Optical pumping
5Quantum wells
4Binary compounds
3Energy-level transitions
3Excitation spectrum
3Gallium Arsenides
2Bound exciton
2Copper selenides
2Gallium Indium Arsenides Mixed
2Indium Phosphides
2Indium selenides
2Inorganic compound
2Luminescence
2Polarization
2Recombination
2Spin flip
2Spin relaxation
2Very low temperature
1Absorption spectra
1Acceptor donor pair
1Acceptors
1Activation energy
1Aluminium Gallium Arsenides Mixed
1Aluminium arsenides
1Annealing
1Band structure
1Binary compound
1Binding energy
1Circular polarization
1Copper compounds
1Copper tellurides
1Crystal defect
1Debye temperature
1Deep level
1Defect states
1Depolarization
1Dimensionality
1Donors
1Electronic structure
1Electrons
1Exciton
1Growth mechanism
1Hanle effect
1III-V compound
1Impurity states
1Indium compounds
1Indium tellurides
1Infrared spectra
1Interband transitions
1Interfacial layer
1Irradiation
1Laser beam
1Light polarization
1Line shape
1Magnetic field effects
1Monolayers
1Phonon spectra
1Properties of materials
1Quantum well
1Radiation polarization
1Silicon
1Single crystal
1Solid solid interface
1Spin
1Spin orientation
1Stokes shift
1Strained quantum well
1Strains
1Stresses
1Temperature
1Temperature dependence
1Temperature range 0-13 K
1Ternary semiconductors
1Theoretical study
1Thickness
1Vacancy
1g factor
1p-type conductors

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