F. Ommes < F. Omnes < F. Ouchen

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]

Ident.	Authors (with country if any)	Title
000390 (2009)		Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy
000481 (2008)		n-type phosphorus-doped polycrystalline diamond on silicon substrates
001176 (2001)		Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
001522 (1999-10-25)		Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
002952 (1991)		Etude du dopage de type n et p des matériaux GaAs et GaInP
002993 (1991)		Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
002A28 (1991)		GaAs-GaInP multilayers for high performance electronic devices
002A29 (1991)		Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
002A56 (1991)		Defects in organometallic vapor-phase epitaxy-grown GaInP layers
002A72 (1991)		A review of the band offsets measurements in the GaAs/Ga0.49In0.51P system
002B01 (1990)		The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
002B34 (1990)		Magnetotransport measurements in GaInP/GaAs heterostructures
002B42 (1990)		Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation
002B48 (1990)		In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measuremets
002B49 (1990)		In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
002B55 (1990)		High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition
002C11 (1989)		Première observation d'une résistance différentielle négative dans un système à double barrière InP/Ga0,47In0,53As
002C19 (1989)		Croissance et caractérisation d'hétérostructures GaAs/Ga0,49In0,51P élaborées par LP-MOCVD
002C20 (1989)		Croissance et caractérisation d'alliages GaInAsP de gaps égaux à 1,3 et 1,15 μm élaborés par LP-MOCVD
002C21 (1989)		Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques
002C76 (1989)		Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition

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List of associated KwdEn.i

Nombre de documents	Descripteur
16	Chemical vapor deposition
15	Semiconductor materials
14	Experimental study
13	Gallium Arsenides
13	Indium Phosphides
11	Heterojunction
11	Inorganic compound
8	Gallium Indium Phosphides Mixed
7	Gallium Indium Arsenides Mixed
7	Gallium Indium Arsenides phosphides Mixed
6	Crystal growth
6	Organometallic compound
6	Photoluminescence
5	Epitaxy
5	Thin film
4	Low pressure
4	Quantum well
4	Silicon
4	Superlattice
3	Characterization
3	Charge carrier concentration
3	Doped materials
3	Electron gas
3	Low temperature
3	Magnetoconductivity
3	Microelectronic fabrication
3	Optical properties
3	Photoconductivity
3	Two dimensional model
2	Anisotropy
2	Cyclotron resonance
2	Deep level transient spectrometry
2	Doping
2	Double heterojunction
2	Electrical properties
2	Exciton
2	Field effect transistor
2	Hall effect
2	High electron mobility transistor
2	Indium Arsenides
2	Indium additions
2	Manufacturing
2	Measurement
2	Optoelectronic device
2	Reflectance
2	Secondary ion mass spectrometry
2	Semiconductor laser
2	Shubnikov de Haas effect
2	Solid solution
2	Temperature
2	Thickness
2	Thin films
2	Voltage capacity curve
2	Voltage threshold
2	X ray diffraction
1	Absorption spectra
1	Advanced technology
1	Application
1	Band structure
1	Boron
1	Boron additions
1	Bound exciton
1	Buffer layer
1	Buried layer
1	CW laser
1	Carrier density
1	Cathodoluminescence
1	Charge carrier mobility
1	Charge carrier trapping
1	Chemical composition
1	Conduction electron
1	Defect level
1	Deposition
1	Depth profiles
1	Diamonds
1	Diffusion
1	Diode
1	Discontinuity
1	Distribution
1	Electrical conductivity
1	Electron paramagnetic resonance
1	Electronic component
1	Energy band
1	Excitation spectrum
1	Excitonic process
1	Fourier transform spectroscopy
1	Free carrier
1	G factor
1	Gallium Arsenides phosphides
1	Gallium Indium Arsenides Phosphides
1	Gallium Indium Arsenides phosphides
1	Gallium Indium Phosphides
1	Gallium Indium Phosphorus Mixed
1	Gallium Phosphides
1	Gallium compounds
1	Gallium nitrides
1	Gallium phosphide
1	Gas mixtures
1	Gases
1	Germanium

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