List of bibliographic references
Number of relevant bibliographic references: 50.
[0-20] [
0 - 20][
0 - 50][
20-40]
| Ident. | Authors (with country if any) | Title |
|---|
| 000666 (2007) |
| MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications |
| 000827 (2006) |
| Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy |
| 000955 (2005) |
| High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001) |
| 000A09 (2005) |
| Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application |
| 000A13 (2005) |
| CBr4 and be heavily doped InGaAs grown in a production MBE system |
| 000A14 (2005) |
| As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000A58 (2004) |
| Two-photon absorption in InP substrates in the 1.55 μm range |
| 000B74 (2004) |
| Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system |
| 000C65 (2003-01-01) |
| Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy |
| 000E42 (2002-08-05) |
| Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments |
| 000E58 (2002-06-03) |
| Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density |
| 000E73 (2002-03-15) |
| Experimental study of hot-electron inelastic scattering rate in p-type InGaAs |
| 001031 (2002) |
| DOS optical switch for microwave optical links based applications |
| 001101 (2001-05-07) |
| Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy |
| 001138 (2001) |
| Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001240 (2001) |
| Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides |
| 001310 (2000-10-15) |
| Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy |
| 001330 (2000-07-10) |
| Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy |
| 001339 (2000-04-10) |
| Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers |
| 001384 (2000) |
| Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates |
| 001425 (2000) |
| Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors |
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