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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « F. Lelarge »
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F. Lefloch < F. Lelarge < F. Lemaire-Dezaly  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000394 (2009) Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000398 (2009) Slow and fast light in quantum dot based semiconductor optical amplifiers
000510 (2008) Recent advances in long wavelength quantum dot based lasers
000513 (2008) RECENT DEVELOPMENTS OF InP-BASED QUANTUM DASHES FOR DIRECTLY MODULATED LASERS AND SEMICONDUCTOR OPTICAL AMPLIFIERS
000657 (2007) Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures
000658 (2007) Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures
000963 (2005) GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator
000A20 (2005) Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy
000A95 (2004) Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices
000D29 (2003) Multiwafer gas source MBE development for InGaAsP/InP laser production
001387 (2000) Strain mapping of V-groove InGaAs/GaAs strained quantum wires using cross-sectional Atomic Force Microscopy
001658 (1999) Strain relaxation at cleaved surfaces studied by atomic force microscopy

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Binary compounds
6III-V semiconductors
6Indium phosphides
5Experimental study
5Gallium arsenides
5Indium arsenides
4GSMBE method
4Gallium phosphides
4Multiple quantum well
3Crystal growth from vapors
3Indium Phosphides
3Molecular beam epitaxy
3Photoluminescence
3Quantum dot lasers
3Semiconductor optical amplifiers
2Atomic force microscopy
2Finite element method
2Ground states
2Heterostructures
2Indium Arsenides
2Nanostructured materials
2Photoreflectance
2Quantum wells
2Quaternary compounds
2Semiconductor lasers
2Ternary compounds
1Active layer
1Ambient temperature
1Arsenic Phosphides
1Band structure
1Binary compound
1Buried laser
1Charge carrier density
1Clock recovery
1Confinement
1Current density
1Dispersion relation
1Distributed feedback lasers
1Doping
1Dynamic properties
1Dynamical systems
1Effective mass model
1Elastic deformation
1Electric contacts
1Electronic structure
1Epitaxial layers
1Excited states
1Feedback
1Gain
1Gallium Arsenides
1Gallium Arsenides phosphides
1Gallium phosphide
1Hamiltonian
1High repetition rate
1High temperature
1III-V compound
1Indium Arsenides phosphides
1Indium phosphide
1Interband transition
1Laser diodes
1Lasers
1Line broadening
1Line width
1MOVPE method
1Microelectronic fabrication
1Mode locked laser
1Modulation spectroscopy
1Modulator
1Non linear effect
1Nonlinear optics
1Optical amplifier
1Optical communication
1Optical feedback
1Optical gain
1Optical isolators
1Optical materials
1Optical properties
1Optical pulse generation
1Optical transition
1Optical waveguides
1Optimization method
1Optoelectronic device
1Optoelectronic devices
1Oscillator strength
1Output power
1Phase shift
1Planarization
1Polarization
1Process control
1Quantum dot devices
1Quantum dots
1Quantum well
1Quantum well devices
1Quantum wires
1Quaternary compound
1Radiation sources
1Reflectivity
1Relaxation
1Segregation
1Self-assembly

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