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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « F. Hassen »
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F. Haddad < F. Hassen < F. Heliot  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000450 (2009) Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescence
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000A59 (2004) Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission
000B89 (2004) Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor
000D00 (2003) Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000D07 (2003) Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
001414 (2000) Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD
001546 (1999-08-01) Theoretical and experimental studies in n-type modulation-doped InxGa1-xAs/InyAl1-yAs/InP magnetic sensors
001667 (1999) Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
001714 (1999) Initial stages of InP/GaP (100) and (111)A, B grown by metal organic chemical vapor deposition
001C30 (1997) Optical characterization of highly mismatched InP/GaAs(111)B epitaxial heterostructures
002141 (1995) Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C
002155 (1995) Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP
002352 (1994) Spin orientation by optical pumping in InxGa1-xAs/AlAs multiple quantum wells
002552 (1993) Spin orientation by optical pumping of strained In0.35Ga0.65As/GaAs quantum wells grown on vicinal substrates
002553 (1993) Spin orientation by optical pumping in strained InxGa1-xAs/GaAs quantum wells
002593 (1993) Optical pumping in strained In0.2Ga0.8As/GaAs quantum wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002810 (1992) Spin orientation by optical pumping in two GaAs/AlxGa1-xAs quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
18Photoluminescence
11Experimental study
11Gallium arsenides
11Indium arsenides
7Binary compounds
7Semiconductor materials
6Optical properties
5III-V semiconductors
5Quantum wells
4Atomic force microscopy
4Excitons
4Experimental result
4Gallium Arsenides
4Growth mechanism
4III-V compound
4Indium Phosphides
4Island structure
4Molecular beam epitaxy
4Optical pumping
4Quantum dots
4Ternary compounds
3Binary compound
3Excitation spectrum
3MOVPE method
3Self organization
2Aluminium arsenides
2Energy-level transitions
2Epitaxy
2Gallium Indium Arsenides Mixed
2Gallium Phosphides
2Indium compounds
2Indium phosphide
2Low temperature
2Microelectronic fabrication
2Monolayers
2Polarization
2Properties of materials
2Spin flip
2Spin relaxation
2Theoretical study
2Thickness
2Time resolved spectra
2Transmission electron microscopy
2Very low temperature
2Waveform
1AES
1Activation energy
1Aluminium Gallium Arsenides Mixed
1Aluminium compounds
1Analysis method
1Anisotropy
1Arsine
1Band structure
1Boron
1Bound exciton
1Chemical composition
1Circular polarization
1Composition effect
1Continuous wave
1Crystal defects
1Crystal growth
1Crystal orientation
1Deep energy levels
1Defect density
1Defect states
1Depolarization
1Dimensionality
1Dislocations
1Electron density
1Electron-hole recombination
1Elliptic shape
1Energy gap
1Energy spectrum
1Exchange interactions
1Exciton
1Fermi level
1Glow discharges
1Ground states
1Hall effect devices
1Hanle effect
1Heteroepitaxy
1Heterojunctions
1High vacuum
1Indium nitride
1Injection laser
1Inorganic compound
1Interface electron state
1Interface states
1Interface structure
1Interfacial layer
1Interlayers
1Interrupts
1Laser beam
1Layer thickness
1Light emission
1Light polarization
1Line width
1Luminescence
1Luminescence spectrum
1Magnetic sensors

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