F. H. Baumann < F. H. Julien < F. H. Pollak

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
000651 (2007)		Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000670 (2007)		Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000808 (2006)		Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000823 (2006)		Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
000836 (2006)		Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure
000942 (2005)		Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots
000A33 (2004-04-15)		Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001)
000C29 (2003-07-15)		Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities
000C38 (2003-05-15)		Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000D13 (2003)		Photoconductive spectral analysis of InAs quantum dot under normal incidence
001061 (2001-11-15)		Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices
001188 (2001)		Optical and structural investigation of InAs/AlSb/GaSb heterostructures
001220 (2001)		Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications
001275 (2001)		Characterisation and optimisation of MBE grown arsenide/antimonide interfaces
001603 (1999-01-18)		Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)
001839 (1998-08-10)		Design and simulation of low-threshold antimonide intersubband lasers
001A62 (1997-11-10)		Intraband absorption in n-doped InAs/GaAs quantum dots
001A73 (1997-10-01)		Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots
001D78 (1996-07-01)		Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
002035 (1995-08-01)		Photoluminescence study of band-gap alignment of intermixed InAsP/InGaAsP superlattices
002063 (1995-03-01)		Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors

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List of associated KwdEn.i

Nombre de documents	Descripteur
15	Experimental study
12	III-V semiconductors
10	Indium arsenides
9	Infrared spectra
8	Gallium arsenides
8	Indium compounds
7	Photoluminescence
5	Absorption spectra
5	Aluminium compounds
5	Quantum dots
5	Quantum wells
5	Semiconductor materials
5	Semiconductor quantum dots
4	Molecular beam epitaxy
4	Photoconductivity
3	Binary compounds
3	Diffusion
3	Energy gap
3	Heterostructures
3	Indium phosphides
3	Intraband transitions
3	Multiple quantum well
3	Strains
3	Subband
3	Theoretical study
3	XRD
2	Aluminium antimonides
2	Aluminium arsenides
2	Aluminium nitrides
2	Arsenic compounds
2	Band structure
2	Excited states
2	Gallium nitrides
2	Infrared detector
2	Inorganic compound
2	Interband transition
2	Interband transitions
2	Interdiffusion
2	Matrix elements
2	Oscillator strengths
2	Photodetector
2	Polarized radiation
2	Quantum dot
2	Secondary ion mass spectrometry
2	Self-assembly
2	Ternary compounds
2	k.p calculations
1	Absorption coefficients
1	Absorption spectroscopy
1	Absorption spectrum
1	Annealing
1	Binary compound
1	Blue shift
1	Bound state
1	Carrier density
1	Chemical diffusion
1	Computerized simulation
1	Conduction bands
1	Cracks
1	Crystal growth from vapors
1	Crystal perfection
1	Defect states
1	Diffusion coefficient
1	Dynamic properties
1	Elastic deformation
1	Electroluminescence
1	Electromagnetic wave transmission
1	Electron mobility
1	Electron relaxation time
1	Electron-phonon interactions
1	Emission spectra
1	Energy level
1	Energy levels
1	Energy-level transitions
1	Excitation spectrum
1	Field effect transistors
1	Fourier transform spectra
1	Gallium Arsenides
1	Gallium Indium Arsenides Mixed
1	Gallium Indium Phosphides Mixed
1	Gallium antimonides
1	Gallium compounds
1	Germanium
1	Ground states
1	High speed
1	High-speed optical techniques
1	Illumination
1	Indium
1	Indium Aluminium Arsenides
1	Indium Phosphides
1	Indium nitrides
1	Infrared detectors
1	Infrared spectroscopy
1	Inorganic compounds
1	Integrated intensity
1	Interface states
1	Ion implantation
1	Laser beams
1	Laser materials
1	Line shape

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