Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « F. Glas »
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F. Giubileo < F. Glas < F. Glotin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000965 (2005) First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs
000B24 (2004) Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
001352 (2000-01-17) Step-bunching instability in strained-layer superlattices grown on vicinal substrates
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
001A61 (1997-11-15) Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices
001D44 (1996-10-07) Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/InGaAsP multiquantum wells with high compensated strains
002110 (1995) The consequences of the atomic size effect in quantitative high resolution electron microscopy
002C35 (1989) Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy
002E77 (1987) Study of static atomic displacements by channelled-electron-beam-induced X-ray emission : Application to In0,53Ga0.47 As alloys
002F38 (1987) Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: application to immiscible III-V alloys
003090 (1984) Applications du S.T.E.M. à la microanalyse des semiconducteurs III-V

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
5Chemical composition
5Gallium arsenides
5III-V semiconductors
5Semiconductor materials
4Inorganic compound
3Epitaxy
3Indium arsenides
3Solid solution
3TEM
3Thin film
2Atomic displacements
2Gallium Indium Arsenides phosphides Mixed
2Indium compounds
2Stress distribution
2Superlattice
2Ternary compounds
2Theoretical study
2Transmission electron microscopy
1APW calculations
1Atomic force microscopy
1Binary compounds
1Channeling
1Crystal growth
1Crystalline state
1Density functional method
1Dislocations
1Elastic deformation
1Electron energy loss spectrum
1Electron microscopy
1Electrons
1Energy dispersion
1Epitaxial layers
1Gallium Arsenides
1Gallium Arsenides phosphides
1Gallium Indium Arsenides Mixed
1Grain boundaries
1Growth from liquid
1High resolution
1Homogeneity
1III-V compound
1Images
1Indium Arsenides
1Indium Arsenides phosphides
1Indium Phosphides
1Indium phosphides
1Instability
1Interface structure
1Ion implantation
1Lattice dynamics
1Long-range order
1Microanalysis
1Miscibility
1Mismatch lattice
1Morphological changes
1Nanostructures
1Ordering
1Photoluminescence
1Precipitation
1Raman scattering
1Scanning transmission electron microscopy
1Screw dislocations
1Semiconductor epitaxial layers
1Semiconductor heterojunctions
1Semiconductor superlattices
1Size
1Strained layer
1Stresses
1Structure factors
1Substrates
1Superlattices
1Surface emitting lasers
1Surface topography
1Thermodynamics
1Thin films
1VPE
1Vicinal surface
1Wafer bonding
1X ray diffraction
1X ray emission
1X ray scattering

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