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Index « Auteurs » - entrée « F. Fossard »
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List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000670 (2007) Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells
000808 (2006) Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells
000942 (2005) Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots
000A33 (2004-04-15) Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001)
000C16 (2003-09-01) Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C29 (2003-07-15) Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities
000C38 (2003-05-15) Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000D13 (2003) Photoconductive spectral analysis of InAs quantum dot under normal incidence
000D41 (2003) Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells
001061 (2001-11-15) Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices
001119 (2001-02-15) Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires on In1-xAlxAs/InP
001220 (2001) Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7III-V semiconductors
6Indium arsenides
6Indium compounds
6Quantum dots
4Aluminium compounds
4Intraband transitions
4Photoluminescence
3Absorption spectra
3Gallium arsenides
3Infrared spectra
3Photoconductivity
3Quantum wells
3Semiconductor materials
2Aluminium arsenides
2Binary compounds
2Electron-phonon interactions
2Interband transitions
2Matrix elements
2Nanostructures
2Optical pumping
2Polarized radiation
2Self-assembly
2Semiconductor quantum dots
2Theoretical study
2k.p calculations
1Absorption coefficients
1Arsenic compounds
1Auger effect
1Band structure
1Binary compound
1Dynamic properties
1Elastic deformation
1Electromagnetic wave transmission
1Electron relaxation time
1Energy levels
1Excited states
1Fourier transform spectra
1Gallium compounds
1High-speed optical techniques
1Illumination
1Indium Aluminium Arsenides
1Indium phosphides
1Infrared detector
1Infrared detectors
1Infrared spectroscopy
1Inorganic compounds
1Integrated intensity
1Interface states
1Line shape
1Mid infrared radiation
1Molecular beam epitaxy
1Mosaic structure
1Optical amplification
1Optical properties
1Oscillator strengths
1Photodetector
1Photodetectors
1Polarons
1Population inversion
1Positron annihilation
1Quantum dot
1Quantum well devices
1Quantum wires
1Radiation detectors
1Refractive index
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor quantum wires
1Semiconductor superlattices
1Stranski Krastanov method
1Ternary compound
1Ternary compounds
1Time resolved spectra
1Time resolved spectroscopy
1Wave functions
1fs range

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