F. Dessenne < F. Devaux < F. Dhondt

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000A27 (2004-05-24)		Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates
001392 (2000)		Simultaneously regenerated 4×40 Gbit/s dense WDM transmission over 10,000 km using single 40 GHz InP Mach-Zehnder modulator
001467 (2000)		Dense WDM (0.27/bit/s/Hz) 4×40 Gbit/s dispersion-managed transmission over 10 000 km with in-line optical regeneration by channel pairs
001B52 (1997-01-06)		1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy
001C21 (1997)		Potential-inserted InGaAs-AlGaInAs shallow quantum wells for electro-optical modulation at 1.55 μm
001C44 (1997)		Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz
001C66 (1997)		High power saturation, polarization insensitive electroabsorption modulator with spiked shallow wells
001D22 (1996-12-30)		Strained InGaAsP/InGaAsP/InAsP multi-quantum well structure for polarization insensitive electroabsorption modulator with high power saturation
001E46 (1996)		Modulateurs électroabsorbants : applications pour les liaisons à haut débit
001F30 (1996)		High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gain
002130 (1995)		Proposal and demonstration of a symmetrical npipn electroabsorption modulator
002144 (1995)		Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser
002186 (1995)		Electroabsorption modulators for high-bit-rate optical communications : a comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP
002219 (1995)		20 Gbit/s high-performance integrated MQW TANDEM modulators and amplifier for soliton generation and coding
002340 (1994)		Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration
002350 (1994)		Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3-1.55 μm
002371 (1994)		On the transmission performances and the chirp parameter of a multiple-quantum-well electroabsorption modulator
002406 (1994)		Full polarization intensitivity of a 20 Gb/s strained-MQW electroabsorption modulator
002410 (1994)		Experimental optimisation of MQW electroabsorption modulators with up to 40 GHz bandwidths
002750 (1993)		20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage
002751 (1993)		10 Gbit/s operation of polarisation insensitive, strained InGaAsP/InGaAsP MQW electroabsorption modulator

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List of associated KwdEn.i

Nombre de documents	Descripteur
13	Experimental study
12	Multiple quantum well
8	Optical modulator
6	Electroabsorption modulator
6	Electrooptical modulator
6	Gallium arsenides
6	III-V compound
5	Experiments
5	Indium Phosphides
5	Indium arsenides
5	Light modulators
5	Quaternary compound
4	Gallium Arsenides
4	Optical modulators
4	Ridge waveguide
4	Semiconducting indium phosphide
4	Semiconductor quantum wells
4	Strained quantum well
3	Distributed feedback laser
3	Electroabsorption modulators
3	Gallium phosphides
3	Indium Arsenides
3	Indium phosphides
3	Infrared radiation
3	Optical telecommunication
3	Quaternary compounds
3	Superlattice
3	Theory
2	Aluminium Indium Arsenides Mixed
2	Aluminum Arsenides
2	Application
2	Bandwidth
2	Communication channels (information theory)
2	Electroabsorption
2	Electrooptical absorption
2	Electrooptical devices
2	Gallium Indium Arsenides Mixed
2	Gallium Indium Arsenides phosphides Mixed
2	Integrated optics
2	Integrated optoelectronics
2	Microelectronic fabrication
2	Modulators
2	Optical communication
2	Optoelectronic device
2	Optoelectronics
2	Phase modulation
2	Photoelectric current
2	Photoluminescence
2	Quantum well
2	Semiconductor materials
2	Ternary compound
2	Wavelength division multiplexing
1	Aluminium arsenides
1	Aluminium compounds
1	Amplification
1	Arsenic alloys
1	Binary compound
1	Bit error rate
1	Butt joint
1	Chemical deposition
1	Chemical vapor deposition
1	Chirp
1	Circuit design
1	Coded pulse generation
1	Conduction bands
1	Deformation
1	Dense wavelength division multiplexing (DWDM)
1	Dense wavelength-division multiplexed (DWDM) channels
1	Dispersion-managed (DM) transmission
1	Electric variables measurement
1	Electrical characteristic
1	Electro-optical modulation
1	Electron device manufacture
1	Electrooptical effects
1	Energy spectrum
1	Experimental result
1	Eye diagram
1	Fiber to fiber gain
1	Frequency modulation
1	Frequency response
1	Gain measurement
1	Gallium Phosphides
1	Gallium alloys
1	Gallium phosphide
1	Heterostructures
1	High speed
1	III-V semiconductors
1	Identical active layer method
1	In-line optical regeneration
1	Indium Gallium Arsenides phosphides Mixed
1	Indium alloys
1	Indium compounds
1	Indium phosphide
1	Integrated circuit
1	Intensity
1	Interferometers
1	Laser
1	Light absorption
1	Light amplifiers
1	Light extinction

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