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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « F. Aniel »
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F. Alsina < F. Aniel < F. Aristone  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001343 (2000-03-01) Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor
001473 (2000) Complex current gain and cutoff frequency determination of HBTs
001D78 (1996-07-01) Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP
001F51 (1996) Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures : an overview
002063 (1995-03-01) Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high-electron-mobility transistors
002400 (1994) High electric field transport effects on low temperature operation of pseudomorphic HEMTs
002563 (1993) Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm
002667 (1993) Gate length electric parameter dependences of ultra-submicrometre δ-doped pseudomorphic HEMTs

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
4Gallium Arsenides
4High electron mobility transistor
2Electrical characteristic
2Electroluminescence
2Gallium arsenides
2Low temperature
2Planar doping
2Semiconductor device
2Size effect
1Aluminium Arsenides
1Aluminium Gallium Arsenides
1Aluminium Gallium Arsenides Mixed
1Aluminium compounds
1Amorphous state
1Binary compound
1Defect states
1Electric frequency measurement
1Electron mobility
1Emission spectra
1Field effect transistor
1Field effect transistors
1Gain measurement
1Gallium Indium Arsenides Mixed
1Heterojunction bipolar transistors
1High electron mobility transistors
1Hot carriers
1III-V compound
1III-V semiconductors
1Impact ionization
1Indium Arsenides
1Indium Gallium Arsenides
1Indium Phosphides
1Indium aluminum arsenide
1Indium arsenides
1Indium compounds
1Microelectronic fabrication
1Microwave device
1Performance
1Performance characteristic
1Poles and zeros
1Production process
1Pseudomorphic device
1Recombination
1Semiconducting indium gallium arsenide
1Semiconducting indium phosphide
1Temperature dependence
1Ternary compound
1Ternary compounds
1Theory
1Transistor gate
1Transition frequency
1Transport process

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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