F. Alaoui < F. Alexandre < F. Alsina

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]

Ident.	Authors (with country if any)	Title
000589 (2008)		Demonstration of planar thick InP layers by selective MOVPE
000C91 (2003)		Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 μm laser emission
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000E87 (2002)		Nitrures de faible gap épitaxiés sur substrat GaAs pour application optoélectronique : Croissance épitaxiale en phase vapeur aux organométalliques
000F61 (2002)		Nitride-based long-wavelength lasers on GaAs substrates
000F98 (2002)		InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
001291 (2001)		(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength range
001410 (2000)		Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPE
001789 (1999)		+55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001A30 (1998)		Beam geometrical modelling of CBE on nonplanar substrate
001A84 (1997-09-29)		Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001C22 (1997)		Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications
001D40 (1996-11)		High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
001D73 (1996-07-15)		Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes
001F28 (1996)		Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
001F71 (1996)		Benefits of chemical beam epitaxy for micro and optoelectronic applications
002045 (1995-06-15)		Acoustical and optical properties of Ga0.52In0.48P: A Brillouin scattering study
002102 (1995)		Uniform selective area growth of GaAs and GaInP by low temperature chemical beam epitaxy
002148 (1995)		Modern epitaxial techniques for HBT structures
002192 (1995)		Dependence of InP and GaAs chemical beam epitaxy growth rate on substrate orientations ; applications to selective area epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
18	Experimental study
11	Epitaxy
9	Indium phosphides
7	Binary compounds
7	Gallium arsenides
7	Heterojunction transistor
7	Photoluminescence
6	Crystal growth from vapors
6	Gallium Arsenides
6	III-V semiconductors
6	Semiconductor materials
5	Chemical composition
5	Epitaxial layers
5	Gallium phosphides
5	MOVPE method
5	Semiconductor lasers
5	Ternary compounds
4	Chemical beam condensation
4	Current density
4	Inorganic compound
3	Chemical beam epitaxy
3	Crystal growth
3	Doping
3	Experiments
3	Gallium Indium Phosphides Mixed
3	Gallium nitrides
3	Heterojunction bipolar transistors
3	III-V compound
3	Indium arsenides
3	Indium nitrides
3	Integrated optoelectronics
3	Laser diodes
3	Quantum well lasers
3	Semiconductor growth
3	Theoretical study
2	Aluminium Gallium Arsenides Mixed
2	Binary compound
2	Bipolar transistors
2	Brillouin effect
2	CBE
2	Carbon additions
2	Current gain
2	Ellipsometry
2	Growth mechanism
2	Indium Phosphides
2	Indium phosphide
2	Infrared laser
2	Kinetics
2	Low temperature
2	Molecular beam condensation
2	Morphology
2	Quaternary compounds
2	Raman spectra
2	Refractive index
2	SIMS
2	Selective area
2	Semiconducting indium gallium arsenide
2	Semiconducting indium phosphide
2	Semiconductor device
2	Semiconductor device manufacture
2	Semiconductor device structures
2	Solid solution
2	Strained quantum well
2	Superlattices
2	Temperature
2	Theory
2	Thin film
2	Thin films
2	Threshold current
2	VPE
2	Vapor phase
2	Voltage current curve
1	Absorption
1	Acoustic properties
1	Ambient temperature
1	Anisotropy
1	Application
1	Arsenides
1	Arsenides nitrides
1	Band offset
1	Bipolar transistor
1	Characterization
1	Charge carrier concentration
1	Clock
1	Collector current density
1	Computer simulation
1	Confinement
1	Critical temperature
1	Crystal doping
1	Crystal orientation
1	Cuttoff frequencies
1	Deformation potential
1	Degradation
1	Dielectric film deposition
1	Diffusion
1	Distributed Bragg reflector lasers
1	Double heterojunction
1	Drift-diffusion approach
1	Elastic constants
1	Elasticity theory

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