E. Trichas < E. V. K. Rao < E. V. Murashova

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]

Ident.	Authors (with country if any)	Title
000A97 (2004)		Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004)		Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000D82 (2003)		Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers
000E38 (2002-08-26)		Simple method to diagnose the performance of electroabsorption modulators on InP using optical low-coherence reflectometry
001268 (2001)		Detection and localization of degradation damaged regions in 1.3 μm laser diodes on InP using low-coherence reflectometry
001670 (1999)		Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
001722 (1999)		Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001723 (1999)		Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001864 (1998-05-18)		Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001938 (1998)		Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001956 (1998)		Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001A84 (1997-09-29)		Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001B52 (1997-01-06)		1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy
001B96 (1997)		The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources
001C11 (1997)		Selective area MOVPE growth of InP, InGaAs and InGaAsP using TBAs and TBP at different growth conditions
001C76 (1997)		Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
001D13 (1997)		AlGaAsSb/AlAsSb microcavity designed for 1.55 μm and grown by molecular beam epitaxy
001D34 (1996-11-11)		Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm
001D77 (1996-07-08)		Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
002000 (1995-11-01)		Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration

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List of associated KwdEn.i

Nombre de documents	Descripteur
26	Experimental study
16	Photoluminescence
12	Semiconductor materials
10	Inorganic compound
8	Indium Phosphides
7	Gallium arsenides
7	III-V semiconductors
7	Indium arsenides
7	Ion implantation
6	Annealing
6	Hydrogenation
6	Indium phosphides
5	Diffusion
5	Gallium phosphides
4	III-V compound
4	Quantum wells
4	VPE
3	Binary compounds
3	Charge carrier concentration
3	Crystal growth from vapors
3	Doped materials
3	Doping
3	Epitaxy
3	Gallium Indium Arsenides Mixed
3	Hydrogen
3	Indium compounds
3	MOVPE method
3	Microelectronic fabrication
3	Passivation
3	Quaternary compounds
3	Semiconducting indium phosphide
3	Semiconductor lasers
3	Semiconductor quantum wells
3	Spectral line shift
3	Ternary compounds
2	Acceptor center
2	Aluminium Indium Arsenides Mixed
2	Aluminium arsenides
2	Beryllium
2	Charge carriers
2	Chemical composition
2	Compensation
2	Concentration distribution
2	Deep level
2	Diffusion profile
2	Distributed feedback lasers
2	Electrical conductivity
2	Electroabsorption
2	Experiments
2	Gallium Arsenides
2	Gallium Arsenides phosphides
2	Heterojunctions
2	Hole
2	Impurity
2	Impurity diffusion
2	Impurity states
2	Indium Arsenides phosphides
2	Indium phosphide
2	Integrated optics
2	Integrated optoelectronics
2	Low pressure
2	Multiple quantum well
2	Nitrogen
2	Non radiative recombination
2	Optical losses
2	Optical properties
2	Quaternary compound
2	Reflectometry
2	SIMS
2	Secondary ion mass spectrometry
2	Strained quantum well
2	Substrates
2	Thermal annealing
2	Waveguide
2	Zinc
1	Aging
1	Arsenic
1	Arsenic alloys
1	Atom migration
1	Auger electron spectrometry
1	Band offset
1	Beryllium additions
1	Binary compound
1	Blue shift
1	Buried layer
1	Carbon
1	Carbon additions
1	Carrier gas
1	Cathodoluminescence
1	Charge carrier
1	Chemical diffusion
1	Chemical vapor deposition
1	Chromium
1	Circuit gain
1	Codoping
1	Confinement
1	Crystal growth
1	Current density
1	Dangling bond
1	Dangling bonds

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