E. Tomzig < E. Tournie < E. Tournié

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000270 (2010)		Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000295 (2010)		Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method
000422 (2009)		MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
000430 (2009)		Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
000669 (2007)		Interface analysis of InAs/GaSb superlattice grown by MBE
000676 (2007)		High-density InSb-based quantum dots emitting in the mid-infrared
000769 (2006)		Structural and optical properties of InSb quantum dots for mid-IR applications
000907 (2005)		Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs
000A37 (2004-04-05)		Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000C01 (2003-12-15)		Isoelectronic traps in heavily doped GaAs:(In,N)
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C37 (2003-05-19)		Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C51 (2003-03-24)		GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000D86 (2003)		Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
000E57 (2002-06-03)		Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing
001113 (2001-03-12)		On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells
001312 (2000-10-02)		Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
002113 (1995)		Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures
002547 (1993)		Strained InAs/AlxGa0.48-xIn0.52As heterostructures : a tunable quantum well materials system for light emission from the near-IR to the mid-IR
002854 (1992)		Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs
002876 (1992)		InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range

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List of associated KwdEn.i

Nombre de documents	Descripteur
15	Photoluminescence
14	III-V semiconductors
13	Experimental study
10	Gallium arsenides
10	Molecular beam epitaxy
7	Indium compounds
7	Semiconductor quantum wells
7	Transmission electron microscopy
6	Indium arsenides
5	III-V compound
5	Semiconductor materials
5	Superlattices
4	Annealing
4	Binary compounds
4	Epitaxy
4	Gallium antimonides
4	Gallium compounds
4	Indium antimonides
3	Crystal growth from vapors
3	Growth mechanism
3	Indium Arsenides
3	Inorganic compound
3	Interfaces
3	Laser diodes
3	Quantum wells
3	Semiconductor growth
3	Semiconductor lasers
3	Wide band gap semiconductors
3	XRD
2	Adatoms
2	Aluminium Gallium Antimonides arsenides Mixed
2	Ambient temperature
2	Antimony
2	Chemical composition
2	Diffusion
2	Gallium Indium Antimonides arsenides Mixed
2	Growth from liquid
2	Heterojunctions
2	Heterostructures
2	Infrared detectors
2	Infrared radiation
2	Injection laser
2	Line widths
2	Localized states
2	Monolayers
2	Nanostructured materials
2	Nanostructures
2	Nonradiative transitions
2	Optical properties
2	Quantum dots
2	RHEED
2	Semiconductor laser
2	Spectral line shift
2	Stimulated emission
2	Temperature
1	Absorbance
1	Absorption coefficients
1	Activation energy
1	Aluminium antimonides
1	Aluminium arsenides
1	Antimony Gallium
1	Antimony Gallium Indium Arsenides Mixed
1	Arrhenius equation
1	Atomic force microscopy
1	Band splitting
1	Band structure
1	Blende structure
1	CW laser
1	Characterization
1	Charge carrier recombination
1	Chemical bonds
1	Compressive stress
1	Conduction bands
1	Continuous wave
1	Continuum
1	Crystal growth
1	Crystal microstructure
1	Crystal perfection
1	Crystal structure
1	Detection
1	Double heterojunction
1	Electroluminescence
1	Electron microscopy
1	Electronic properties
1	Electronic structure
1	Electroreflection
1	Energy gap
1	Epitaxial layers
1	Excitons
1	Experimental design
1	Field effect transistors
1	Fractals
1	Gallium Arsenides nitrides
1	Gallium Indium Antimonides arsenides
1	Gallium Indium Arsenides Mixed
1	Gallium phosphide
1	Heavily doped semiconductors
1	Heteroepitaxy
1	Heterojunction
1	High density

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