IndiumV3, France, Analysis, indexItem, Author.i, E. Monroy

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.

Ident.	Authors (with country if any)	Title
000094 (2012)		Structure and strain state of polar and semipolar InGaN quantum dots
000097 (2012)		Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
000112 (2012)		Morphology and origin of V-defects in semipolar (11-22) InGaN
000123 (2012)		Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
000217 (2011)		Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
000305 (2010)		Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering
000C16 (2003-09-01)		Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C46 (2003-04-07)		In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000C61 (2003-02-01)		Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
001443 (2000)		High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Molecular beam epitaxy
6	III-V semiconductors
6	Indium nitride
5	Gallium nitride
5	Photoluminescence
4	III-V compound
3	Aluminium compounds
3	Crystal structure
3	Experimental study
3	Gallium compounds
3	Indium
3	Indium compounds
3	Nanostructures
3	Quantum dots
3	Semiconductor epitaxial layers
3	Semiconductor growth
3	Template reaction
3	XRD
2	Growth mechanism
2	Nanocrystal
2	Optical properties
2	Plasma assisted processing
2	Plasma deposition
2	Radiofrequency sputtering
2	Roughness
2	Self-assembly
2	Semiconductor materials
2	Sputtering
2	Superlattices
2	Ternary compounds
2	Thin films
2	Threading dislocation
2	Transmission electron microscopy
1	Absorption edge
1	Application
1	Atomic force microscopy
1	Binary compounds
1	Blue shift
1	Buffer layer
1	Confinement
1	Crystal faces
1	Crystal orientation
1	Crystal perfection
1	Crystalline material
1	Electric field effects
1	Electron microscopy
1	Experiments
1	Faceting
1	Film growth
1	Fluctuations
1	Grain size
1	Growth rate
1	Indium dot
1	Inorganic compounds
1	Interfaces
1	Microelectronic fabrication
1	Morphology
1	Mosaic structure
1	Nanometer scale
1	Nanostructured materials
1	Near ultraviolet spectral range
1	Non radiative recombination
1	Nucleation
1	Ohmic contacts
1	Operating conditions
1	Optical materials
1	Phase analysis
1	Physical vapor deposition
1	Polarity
1	Preferred orientation
1	Quantum wells
1	RHEED
1	Raman scattering
1	Raman spectroscopy
1	Reactive ion etching
1	Reactive sputtering
1	Schottky barrier diodes
1	Schottky barrier photodetectors
1	Self-assembled layers
1	Semiconducting gallium arsenide
1	Semiconducting zinc compounds
1	Semiconductor device structures
1	Semiconductor doping
1	Semiconductor quantum dots
1	Soldering
1	Spectral line shift
1	Stacking faults
1	Strains
1	Substrates
1	Surface segregation
1	Surface states
1	Surfactants
1	Temperature dependence
1	Template method
1	Thick films
1	Ultraviolet detectors
1	Ultraviolet spectroscopy
1	V shape
1	Wide band gap semiconductors
1	Wurtzite structure

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   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    E. Monroy
}}

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List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « E. Monroy »