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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « E. Losson »
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E. Litwin-Staszewska < E. Losson < E. Lugagne Delpon  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001A14 (1998) Electrical properties of MIS structures with BN insulating layer
001C20 (1997) Preparation of boron nitride thin films by microwave plasma enhanced CVD, for semiconductor applications
001C63 (1997) Improved high frequency C-V method for interface state analysis on MIS structures
001E87 (1996) Practical methods to improve DLTS data smoothing
002036 (1995-08) Interface state measurements by the DLS-82E lock-in spectrometer
002139 (1995) Peak and side data analyses to measure deep levels by DLS-82E lock-in spectrometer
002610 (1993) New method of deep level transient spectroscopy analysis : a five emission rate method
002745 (1993) A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
6Indium phosphides
5DLTS
4Gold
4Theoretical study
3Boron nitrides
3MIS structure
2CV characteristic
2Defect states
2III-V compound
2Optical properties
2Semiconductor materials
2Silicon
1Activation energy
1Arrhenius equation
1Binary compounds
1CVD
1Capacitance measurement
1Capacitance voltage characteristics
1Characterization
1Corrections
1Data smoothing
1Deep energy levels
1Deep level
1Deep level transient spectrometry
1Deep level transient spectroscopy
1Dielectric materials
1Electrical properties
1Electronic structure
1Ellipsometry
1Energy-level density
1Experiments
1Indium Phosphides
1Interface
1Interface state analysis
1Interface states
1Leakage current
1MIS devices
1MIS junctions
1MIS structures
1Majority carrier
1Measuring methods
1Microwave radiation
1Modified bias temperature stress (BTS)
1PECVD
1Photoelectron spectroscopy
1Refractive index
1Schottky barrier
1Schottky barrier diode
1Schottky barrier diodes
1Semiconducting indium phosphide
1Semiconductor device structures
1Semiconductor doping
1Temperature dependence
1Test method
1Thickness
1Thin films
1Traps
1Voltage measurement

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