Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « E. Le Bourhis »
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E. Laureto < E. Le Bourhis < E. Le Gall  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000537 (2008) Nanoindentation response of a thin InP membrane
000946 (2005) Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity
000A06 (2005) Conservative indentation flow throughout thin (011) InP foils
000A81 (2004) Solid-solution strengthening in ordered InxGa1-xP alloys
000B37 (2004) Indentation punching through thin (011) InP
000D11 (2003) Plastic deformation of III-V semiconductors under concentrated load
000F20 (2002) Strength enhancement of compensated strained InP/AlP superlattice
000F85 (2002) Low-load deformation of InP under contact loading; comparison with GaAs
001133 (2001) Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
001194 (2001) Non-linear solid solution strengthening of InGaAs alloy
001233 (2001) In-depth deformation of InP under a Vickers indentor
001395 (2000) Room-temperature plasticity of InAs
001436 (2000) In-depth structure of rosette arms in indium phosphide
001468 (2000) Deformations induced by a Vickers indentor in InP at room temperature
001C39 (1997) Material flow at the surface of indented indium phosphide
001F05 (1996) Material flow under an indentor in indium phosphide
002162 (1995) Investigation of the plasticity of InP as a function of temperature

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Semiconductor materials
11Experimental study
11Indentation
11Indium phosphides
7Plasticity
6Binary compounds
6Dislocations
6Gallium arsenides
5TEM
4Indium arsenides
4Monocrystals
4Nanoindentation
4Plastic deformation
4Plastic flow
4Ternary compounds
4Transmission electron microscopy
3III-V semiconductors
3Optical microscopy
3SEM
2Cathodoluminescence
2Hardness
2Material flow
2Mechanical strength
2Phosphides
2Plasticity zone
2Strengthening
2Surfaces
2Temperature dependence
2Thin films
2Vickers hardness
2Vickers test
1Aluminium arsenides
1Aluminium phosphides
1Ambient temperature
1Applied load
1Atomic force microscopy
1Chemical beam epitaxy
1Compensation
1Compression test
1Convergent beam method
1Cracking
1Critical resolved shear stress
1Deformation
1Delamination
1Dislocation density
1Dislocation motion
1Electron diffraction
1Etching
1Flow stress
1Focused ion beam technology
1Fractures
1Gallium phosphides
1Growth mechanism
1Hardening
1Hardness indentation
1Heteroepitaxy
1Heterostructures
1High temperature
1II-V semiconductors
1Indium antimonides
1Indium phosphide
1Inorganic compounds
1Interferometry
1Light interferometry
1MOVPE method
1Mechanical properties
1Mechanical tests
1Microhardness
1Microstructure
1Mismatch lattice
1Molecular beam epitaxy
1Non linear effect
1Penetration depth
1Photolithography
1Polarity
1Profilometry
1Quantitative chemical analysis
1Relaxation
1Ruptures
1Scanning electron microscopy
1Shear
1Slip
1Slip flow
1Solid solution hardening
1Solid-solid interfaces
1Stiffness
1Strains
1Stress effects
1Stress relaxation
1Substructure
1Superlattices
1Topography
1Twinning
1Yield strength
1Yield stress

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