Auteurs
Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « E. Bergignat »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
E. Berard < E. Bergignat < E. Bigan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001103 (2001-05) Growth of GaInTlAs layers on InP by molecular beam epitaxy
001242 (2001) Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy
001F27 (1996) In situ XPS investigation of indium surface segregation for Ga1-xInxAs and Al1-xInxAs alloys grown by MBE on InP(001)
002114 (1995) Surface chemistry of InAlAs after (NH4)2Sx sulphidation
002288 (1994-05-15) X-ray-photoelectron-diffraction study of InAs/InP(001) heterostructures
002B68 (1990) Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3
002C88 (1989) Anodic oxidation of InP in pure water
002D63 (1988) Optical properties of native oxides on InP
003007 (1986) New native oxide of InP with improved electrical interface properties
003063 (1985) On the nature of oxides on InP surfaces

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
3Gallium arsenides
3Indium arsenides
3Molecular beam epitaxy
3Photoelectron emission
3Semiconductor materials
3X ray
2Density of states
2Electronic structure
2Indium Phosphides
2Inorganic compound
2Interface
2Oxides
2Photoelectron spectrometry
2Photoelectron spectroscopy
2Strains
2Ternary compounds
1Aluminium Arsenides
1Aluminium Phosphates
1Aluminium arsenides
1Ammonium Sulfides
1Amorphous state
1Aqueous solution
1Chemical bond
1Chemical composition
1Chemical treatment
1Cleaning
1Crystal growth
1Dielectric function
1Electric contact
1Electrochemical reaction
1Electrodes
1Ellipsometry
1Empirical model
1Epitaxial film
1Evaporation
1Fabrication property relation
1Film growth
1Growth mechanism
1Heterostructures
1III-V compound
1III-V semiconductors
1Illumination
1Impurities
1Impurity segregation
1Indium Arsenides
1Indium Hydrates
1Indium Oxides
1Indium Phosphates
1Indium Phosphates Oxides Mixed
1Indium compounds
1Indium phosphides
1Interface electron state
1Low temperature
1Microelectronic fabrication
1Monocrystals
1N type conductivity
1Oxidation
1Oxide layer
1Passivation
1Phosphites
1Physical method
1Quantity ratio
1RHEED
1Segregation
1Semiconductor growth
1Silicon Oxides
1Single crystal
1Stoichiometry
1Substrates
1Sulfurization
1Surface analysis
1Surface reconstruction
1Surface structure
1Surface treatment
1Temperature effect
1Temperature effects
1Ternary compound
1Thallium additions
1Thallium compounds
1Theoretical study
1Thickness
1Thin film
1Thin films
1Tight binding approximation
1Twinning
1Valence band
1Voltage capacity curve
1X radiation
1XRD

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "E. Bergignat" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "E. Bergignat" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    E. Bergignat
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024