IndiumV3, France, Analysis, indexItem, Author.i, D. Vignaud

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List of bibliographic references

Number of relevant bibliographic references: 13.

Ident.	Authors (with country if any)	Title
000115 (2012)		Investigation of indium nitride for micro-nanotechnology
000677 (2007)		High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
000827 (2006)		Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
000A58 (2004)		Two-photon absorption in InP substrates in the 1.55 μm range
000C65 (2003-01-01)		Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy
000D47 (2003)		Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
000E58 (2002-06-03)		Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
001589 (1999-02-15)		Type II and mixed type I-II radiative recombinations in AlInAs-InP heterostructures
001838 (1998-08-15)		Photoluminescence study of the interface in type II InAlAs-InP heterostructures
001881 (1998-03-02)		Direct and inverse equivalent InAlAs-InP interfaces grown by gas-source molecular beam epitaxy
002262 (1994-08-15)		InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface
003105 (1984)		Optical absorption studies of plastically deformed InSb
003116 (1984)		Free-carrier optical absorption induced by dislocation scattering mechanisms in III-V compounds

List of associated KwdEn.i

Nombre de documents	Descripteur
8	Experimental study
8	III-V semiconductors
7	Photoluminescence
5	Indium compounds
4	Aluminium compounds
4	III-V compound
4	Indium arsenides
4	Molecular beam epitaxy
3	Buffer layer
3	Gallium arsenides
3	Heterostructures
3	Interface structure
2	Aluminium arsenides
2	Carrier lifetime
2	Chemical beam epitaxy
2	Diffusion
2	Dislocation
2	Doping
2	Indium Antimonides
2	Low temperature
2	Microstructure
2	Optical absorption
2	Semiconductor epitaxial layers
2	Semiconductor heterojunctions
2	Semiconductor materials
2	Temperature dependence
2	Ternary compound
2	Theoretical study
2	Time resolved spectra
1	Absorption spectrum
1	Aluminium antimonides
1	Anomaly
1	Auger effect
1	Autocorrelations
1	Beryllium
1	Beryllium addition
1	Bipolar transistor
1	CVD
1	Carrier density
1	Charge carrier
1	Charge carrier scattering
1	Columnar structure
1	Conduction bands
1	Crystal growth from vapors
1	Defect states
1	Dislocation density
1	Doped materials
1	Edge dislocation
1	Electron mobility
1	Electron temperature
1	Electron-hole recombination
1	Energy gap
1	Energy-level transitions
1	Epitaxial layers
1	Experimental design
1	Fabrication structure relation
1	Free carrier
1	GSMBE method
1	Gallium antimonides
1	Gallium compounds
1	Growth mechanism
1	Heavily doped semiconductors
1	Hexagonal crystals
1	High electron mobility transistor
1	High electron mobility transistors
1	High temperature
1	Impurity
1	Indium nitride
1	Indium phosphides
1	Infrared absorption
1	Inorganic compound
1	Interfaces
1	Light transmission
1	MOCVD
1	Metamorphic transistor
1	Microelectronic fabrication
1	Nanostructured materials
1	Nanotechnology
1	Nonlinear optics
1	Optical properties
1	Photoelectric effect
1	Piezoelectricity
1	Plastic deformation
1	Poisson equation
1	Quantum wells
1	Recombination
1	Refractive index
1	Roughness
1	Scanning electron microscopy
1	Schroedinger equation
1	Semiconductor growth
1	Semiconductor quantum wells
1	Single crystal
1	Stress relaxation
1	Temperature effect
1	Temperature range 0-13 K
1	Temperature range 65-273 K
1	Time delay
1	Time resolution
1	Two photon absorption

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   |clé=    D. Vignaud
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Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « D. Vignaud »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Vignaud »