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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Theron »
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D. Thenot < D. Theron < D. Thomas  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000954 (2005) High performances of InP channel power HEMT at 94 GHz
000A22 (2005) 94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
000B78 (2004) Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000E11 (2003) 60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
001251 (2001) Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001287 (2001) A 0.15-μm 60-Ghz high-power composite channel GaInAs/InP HEMT with low gate current
001431 (2000) Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001453 (2000) Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage
001494 (2000) 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001715 (1999) Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001726 (1999) High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001787 (1999) 0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001788 (1999) 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001898 (1998-01) Nonselective wet chemical etching of GaAs and AlGaInP for device applications
001991 (1998) InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
001A29 (1998) Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure
002451 (1994) 1W/mm power pseudomorphic HFET with optimised recess technology
002727 (1993) Characterization of GaAs and InGaAs double-quantum well heterostructure FET's

List of associated KwdEn.i

Nombre de
documents		Descripteur
12High electron mobility transistors
11Current density
8Experiments
7Theory
7Transconductance
5High electron mobility transistor
5Molecular beam epitaxy
5Semiconducting indium gallium arsenide
5Semiconductor doping
4Electric breakdown
4Gallium Arsenides
4Power gain
4Semiconducting gallium arsenide
4Substrates
4Ternary compound
3Electron transport properties
3Gates (transistor)
3Heterojunctions
3III-V compound
3Impact ionization
3Indium Arsenides
3Ohmic contacts
3Optimization
3Performance evaluation
3Semiconductor device structures
3Semiconductor growth
2Carrier concentration
2Composite material
2Composition effects
2Dislocations (crystals)
2Drain voltage
2Electric potential
2Electric power measurement
2Electrical characteristic
2Etching
2Experimental study
2Field effect transistor
2Heterojunction transistor
2High performance
2Indium Phosphides
2Indium aluminum arsenide
2Indium compounds
2Indium phosphide
2Output power
2Power transistor
2Quantum well
2Schottky barrier diodes
2Semiconducting aluminum compounds
2Semiconducting indium phosphide
2Semiconductor device manufacture
1Aluminium Arsenides
1Aluminium compounds
1Aluminum
1Aluminum alloys
1Aluminum indium arsenide
1Binary compound
1Boundary conditions
1Carrier mobility
1Composite channels
1Computer simulation
1Current gain
1Current voltage characteristics
1Cut off frequency
1Dirichlet conditions
1Double heterojunction metamorphic high electron mobility transistors
1Electric breakdown of solids
1Electric current control
1Electric fields
1Electron mobility
1Energy gap
1Enhancement mode device
1Enhancement-mode (E-mode) devices
1Epilayers
1Equivalent circuits
1Extrinsic transconductance
1Frequencies
1Frequency characteristic
1GSMBE method
1Gallium Indium Arsenides Mixed
1Gallium Phosphides
1Gallium arsenides
1Gallium compounds
1Gallium indium arsenide
1Gas source molecular beam epitaxy
1Gate current
1Heterojunction
1High density
1High power
1Hydrodynamics
1III-V semiconductors
1Indium arsenides
1Integrated circuit
1Interfaces (materials)
1Inverse step metamorphic buffers
1Measurement
1Metamorphic
1Metamorphic buffer layers
1Metamorphic high-electron mobility transistor (MM-HEMT)
1Microelectronic fabrication
1Microwave circuit

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