Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Robein »
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D. Robart < D. Robein < D. Robert  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
002000 (1995-11-01) Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration
002146 (1995) Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
002218 (1995) 8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
002675 (1993) Experimental study of the hydrogen complexes in indium phosphide
002791 (1992) Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP
002837 (1992) New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product
002855 (1992) Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002925 (1992) Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation
002A21 (1991) High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
002A32 (1991) First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002A67 (1991) Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process
002A69 (1991) Application of AP MOVPE to a new butt-coupling scheme
002C39 (1989) Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

List of associated KwdEn.i

Nombre de
documents
Descripteur
10Indium Phosphides
9Experimental study
6Organometallic compound
6Semiconductor materials
5Epitaxy
5Gallium Indium Arsenides Mixed
5Inorganic compound
3Chemical vapor deposition
3Gallium Indium Arsenides phosphides Mixed
3Growth from vapor
3Microelectronic fabrication
3Monolithic integrated circuit
3Photoluminescence
3Scanning electron microscopy
3Semiconductor laser
3Silicon
3Thin film
3Zinc
2Buried laser
2Cadmium
2Charge carrier concentration
2Circuit design
2Crystal growth
2Distributed feedback lasers
2Doping
2Double heterojunction
2Gallium Arsenides
2III-V compound
2Integrated optics
2Integrated optoelectronics
2Iron
2Laser
2Manufacturing
2Multiple quantum well
2Optical properties
2Optical waveguide
2Secondary ion mass spectrometry
1Absorption spectra
1Acceptor center
1Acceptors
1Active layer
1Aluminium Gallium Arsenides Mixed
1Aluminium Gallium Indium Arsenides Mixed
1Anharmonicity
1Assay
1Bandwidth
1Beryllium
1Beryllium additions
1Binary compound
1Cadmium additions
1Chemical beam condensation
1Chemical diffusion
1Chemical etching
1Codoping
1Complex defect
1Coupled cavity laser
1Coupling
1Coupling coefficient
1Current-optical power characteristic
1Diffusion
1Distributed feedback laser
1Doped materials
1Electric properties
1Electroabsorption modulator
1Excitons
1Experiments
1Field effect transistor
1GRIN SCH laser
1Gallium phosphides
1Growth from liquid
1Hall effect
1Heterojunction
1Hydrogen bonds
1Hydrogenation
1Impurity
1Impurity distribution
1Impurity phonon interaction
1Indium arsenides
1Indium phosphides
1Infrared radiation
1Infrared spectra
1Injection laser
1Interstitial
1Iron additions
1Kinetics
1Lamellar structure
1Lattice vibrations
1Light absorption
1Light modulators
1Light sources
1Luminescence decay
1Manufacturing process
1Molecular beam condensation
1Monolithic integrated circuits
1Operating mode
1Optical coupling
1Optical materials
1Optical modulators
1Optical transmission
1Optoelectronic device

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