Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Pavlidis »
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D. Pavin < D. Pavlidis < D. Pellat  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
001A01 (1998) Growth characteristics of hydride-free chemical beam epitaxy and application to GaLnP/GaAs heterojunction bipolar transistors
002A29 (1991) Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
002B01 (1990) The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
002B55 (1990) High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Chemical vapor deposition
3Gallium Arsenides
2Field effect transistor
2Gallium Indium Arsenides Mixed
2Gallium Indium Phosphides Mixed
2Heterojunction transistor
2Microelectronic fabrication
2Organometallic compound
2Voltage threshold
1Binary compound
1Bipolar transistor
1Chemical beam condensation
1Doping
1Frequency characteristic
1Gallium Indium Arsenides phosphides Mixed
1Gallium Phosphides
1Growth
1Heterojunction
1High performance
1III-V compound
1Indium Phosphides
1Insulating material
1Low pressure
1Low temperature
1Performance
1Ternary compound
1Transconductance
1Transistor
1X ray diffraction
1p n junction

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