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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Lecrosnier »
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D. Leclerc < D. Lecrosnier < D. Lefebvre  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
002562 (1993) Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers
002650 (1993) InGaAs/InP strained layer quantum wells grown by molecular beam epitaxy
002A26 (1991) GaPSb : a new ternary material for Schottky diode fabrication on InP
002B37 (1990) Low-temperature DC characteristics of pseudomorphic Ga0.18In0.82P/InP/Ga0.47In0.53As HEMT
002C17 (1989) Dopage béryllium de couches InGaAs élaborées par épitaxie jet moléculaire: étude de la compensation
002C43 (1989) Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
002D47 (1988) Schottky and field-effect transistor fabrication on InP and GalnAs
002E90 (1987) Residual defect center in GaInAs/InP films grown by molecular beam epitaxy
002F11 (1987) Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy
002F19 (1987) GalnAs junction fet fully dry etched by metal organic reactive ion etching technique

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Gallium Indium Arsenides Mixed
6Experimental study
6Indium Phosphides
4Inorganic compound
4Semiconductor materials
3Epitaxy
3Field effect transistor
3Molecular beam condensation
3Schottky barrier diode
3Voltage current curve
2Barrier height
2Beryllium
2Crystal growth
2Doping
2Electrical properties
2Energy gap
2Epitaxial film
2Heterojunction
2High electron mobility transistor
2III-V compound
2Impurity
2Mismatch lattice
2Oxygen
2Photoluminescence
2Secondary ion mass spectrometry
2Thickness
1Band structure
1Binary system
1Characterization
1Charge carrier concentration
1Charge carrier mobility
1Chemical composition
1Compensation
1Concentration distribution
1Concentration effect
1Congress
1Contamination
1Deep level transient spectrometry
1Defect level
1Donor center
1Electric resistivity
1Electrical characteristic
1Engraving
1Gallium Antimonides phosphides
1Gallium Indium Arsenides
1Gallium Indium Phosphides
1Gallium Indium Phosphides Mixed
1Growth from vapor
1Hall effect
1Ideality
1Improvement
1Inversion layer
1Iron
1Junction field effect transistor
1Laser
1Low temperature
1Metal semiconductor field effect transistor
1Microelectronic fabrication
1Molecular beam
1N type conductivity
1Operating mode
1Optical properties
1P type conductivity
1Preparation
1Reactive ion etching
1Schottky barrier
1Self aligned gate technology
1Semiconductor laser
1Solid solution
1Strained quantum well
1Surface treatment
1Temperature
1Temperature effect
1Ternary system
1Thin film
1Transconductance
1Transmission electron microscopy
1Velocity
1Voltage capacity curve

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