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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Floriot »
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D. Ferry < D. Floriot < D. Flot  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000272 (2010) Reliability of high voltage/high power L/S-band Hbt technology
001236 (2001) Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
001727 (1999) High-performance collector-up InGaP/GaAs heterojunction bipolar transistor with Schottky contact
001B74 (1997) Conception d'un oscillateur H.B.T. GaInP/GaAs très faible bruit de phase : -124 dBc/Hz à 10 KHz en bande C
002335 (1994) Le transistor bipolaire à hétérojonction GaInP/GaAs. Technologie et performances hyperfréquences
002391 (1994) LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Ternary compound
4Binary compound
4Heterojunction transistor
3Gallium Arsenides
3Gallium phosphide
3Heterojunction bipolar transistors
3Indium phosphide
2Bipolar transistor
2Epitaxy
2Experimental study
2Gallium Phosphides
2Gallium arsenides
2III-V compound
2Indium Phosphides
2Microwave oscillator
2Semiconductor device
2X ray diffraction
1Activation energy
1Annealing
1Base emitter junction
1Carbon addition
1Chemical vapor deposition
1Damaging
1Degradation
1Dislocation
1Doping
1Durability
1Electric breakdown of solids
1Epitaxial film
1Equivalent circuit
1Experiments
1Failure analysis
1Gallium Indium Phosphides Mixed
1Heterojunction
1High voltage
1Hydrogenation
1L band
1Long term test
1Low noise circuit
1Low pressure
1Manufacturing process
1Microelectronic fabrication
1Microelectronics
1Microwave device
1Microwave transistor
1Monolithic integrated circuit
1Noise spectrum
1Organometallic compound
1Performance characteristic
1Phase noise
1Power amplifier
1Power gain
1Power transistor
1Reliability
1Robustness
1S band
1SIMS
1Schottky contact
1Secondary ion mass spectrometry
1Semiconducting boron
1Semiconducting gallium arsenide
1Semiconducting indium compounds
1Semiconductor device reliability
1Semiconductor doping
1Semiconductor junctions
1Thin film
1Thin film device
1Transistor
1Transistor base
1Transmission electron microscopy
1Voltage capacity curve
1Voltage controlled oscillator

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "D. Floriot" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "D. Floriot" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
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   |clé=    D. Floriot
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