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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Ferre »
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D. Feezell < D. Ferre < D. Ferry  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000D42 (2003) Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers
000D47 (2003) Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
001259 (2001) Effects of mismatch strain and alloy composition on the formation of inas islands on InAIAs templates : Special issue papers
001267 (2001) Determination of the composition of coherently strained islands by transmission electron microscopy
001271 (2001) Comparison of InAs islands self-assembled on pseudomorphic and metamorphic InAlAs buffer layers grown on GaAs substrate
001322 (2000-09) Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
001376 (2000) Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001494 (2000) 0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001719 (1999) InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
001787 (1999) 0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001974 (1998) MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
001C83 (1997) Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(001)
001E30 (1996-02-01) Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Molecular beam epitaxy
10Experimental study
10Indium arsenides
7Aluminium arsenides
6Buffer layer
6Gallium arsenides
5Stress relaxation
4Atomic force microscopy
4Crystal growth from vapors
4III-V semiconductors
4Mismatch lattice
3Epitaxial layers
3Heterojunctions
3High electron mobility transistors
3Semiconductor materials
3Ternary compounds
2Chemical composition
2Current density
2Experiments
2High electron mobility transistor
2Indium aluminum arsenide
2Island structure
2Metamorphism
2Morphology
2Self assembly
2Semiconducting indium gallium arsenide
2Substrates
2TEM
2Ternary compound
1Aluminium compounds
1Carrier mobility
1Concentration effect
1Crystal faces
1Current voltage characteristics
1Dislocation
1Dislocations
1Dislocations (crystals)
1Double heterojunction metamorphic high electron mobility transistors
1Elastic deformation
1Electron gas
1Electron transport properties
1Fabrication structure relation
1Finite element method
1Graded junction
1Indium compounds
1Inverse step metamorphic buffers
1Metamorphic transistor
1Microelectronic fabrication
1Microstructure
1Moire deflectometry
1Nanostructures
1Operating mode
1Optimization
1Plastic deformation
1Pseudomorphic growth
1RHEED
1Relaxation
1Relaxation processes
1STM
1Scattering
1Semiconductor device manufacture
1Semiconductor device structures
1Semiconductor growth
1Semiconductor quantum dots
1Semiconductor thin films
1Solid source molecular beam epitaxy
1Solid-solid interfaces
1Step
1Surface structure
1Surfaces
1Temperature effect
1Template
1Theoretical study
1Transconductance
1Transport processes

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