Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Deresmes »
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D. Delprat < D. Deresmes < D. Deroo  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
000E42 (2002-08-05) Why do (2×4) GaAs and InAs (001) surfaces exposed to phosphorus have so different behavior? Elastic strain arguments
001101 (2001-05-07) Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy
001240 (2001) Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides
001330 (2000-07-10) Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy
001339 (2000-04-10) Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Experimental study
5III-V semiconductors
4Indium compounds
3Gallium compounds
3Semiconductor growth
2Atomic force microscopy
2Molecular beam epitaxy
2RHEED
2Semiconductor epitaxial layers
2Surface reconstruction
1Chemical beam epitaxy
1Chemical composition
1Critical size
1Crystal growth from vapors
1Elastic deformation
1GSMBE method
1Gallium arsenides
1Gallium phosphides
1Growth mechanism
1Indium phosphides
1Internal stresses
1Monolayers
1Phosphorus
1Semiconductor quantum dots
1Semiconductor quantum wires
1Solid solutions
1Strained layer
1Stress relaxation
1Surface energy
1Surface segregation
1Surface topography
1Thickness
1Thin films
1VPE
1X-ray photoelectron spectra
1XRD

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