Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « D. Decoster »
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D. De Viry < D. Decoster < D. Delacourt  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]
Ident.Authors (with country if any)Title
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000351 (2010) Carrier induced optical index variations in InP waveguide diodes: the thermal effects contribution
000A09 (2005) Comparison between carried-induced optical index, Ioss variations and carrier lifetime in GaInAsP/InP heterostructures for 1.55 μm DOS application
000B22 (2004) Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching
000B75 (2004) Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides
001031 (2002) DOS optical switch for microwave optical links based applications
001425 (2000) Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
001B61 (1997) Phototransistors bipolaires à hétérojonction InP/InGaAs à guide d'onde
001B92 (1997) Theoretical study of p-i-n photodetectors' power limitations from 2.5 to 60 GHz
001D60 (1996-09) Etude et développement de diodes lasers sur InP pour la génération de signaux millimétriques
001F04 (1996) Modeling of microwave top illuminated PIN photodetector under very high optical power
001F55 (1996) Electro-optical mixing in an edge-coupled GaInAs/InP heterojunction phototransistor
002149 (1995) Modelling of self-aligned total internal reflection waveguide mirrors : an interlaboratory comparison
002150 (1995) Modeling of waveguide PIN photodetectors under very high optical power
002172 (1995) High optical power nonlinear dynamic response of AlInAs/GaInAs MSM photodiode
002194 (1995) Cutoff frequency and responsivity limitation of AlInAs/GaInAs MSM PD using a two dimensional bipolar physical model
002238 (1994-11) Etude de photodétecteurs métal-semiconducteur-métal pour des applications micro-ondes
002842 (1992) Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications
002942 (1991) Etude et réalisation de circuits intégrés optoélectroniques microondes
002997 (1991) Numerical simulation of avalanche photodiodes with guard ring
002C93 (1989) 1.3-1.55 μm wavelength integrated photoreceiver using GaInAS/GaAs heteroepitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
8III-V compound
7Gallium Arsenides
7Indium Phosphides
7Semiconducting indium phosphide
7Theory
6Binary compound
6Monolithic integrated circuit
5Gallium Indium Arsenides Mixed
5Optical waveguides
4Cut off frequency
4Indium Arsenides
4Photodiode
4Ternary compound
4Theoretical study
3Aluminium Arsenides
3Comparative study
3Computer simulation
3Electric field
3Experimental study
3Experiments
3Field effect transistor
3MSM structure
3Modeling
3Photodetectors
3Semiconducting indium gallium arsenide
3Semiconductor device models
3Substrates
2Application
2Bias voltage
2Carrier lifetime
2Cross section
2Drift velocity
2Etching
2Experimental test
2Frequency characteristic
2Heterojunction bipolar transistors
2III-V semiconductors
2Integrated optics
2Light propagation
2Light transmission
2Microwave
2Microwave circuit
2Microwaves
2Numerical simulation
2Optical links
2Optical power
2Optical receiver
2Optical telecommunication
2Optoelectronic device
2Photoconducting device
2Photodetector
2Phototransistors
2Physical model
2Quantum efficiency
2Semiconducting gallium compounds
2Spurious signal noise
2Two dimensional model
2p i n diode
1Algorithms
1Aluminium Gallium Arsenides Mixed
1Amplitude modulation
1Avalanche diode
1Beam propagation method
1Binary compounds
1Bipolar transistor
1Bistability
1Bit error rate
1Block diagram
1Buffer layer
1Buried laser
1CVD
1Calculations
1Carrier concentration
1Circuit theory
1Columnar structure
1Computational methods
1Computing method
1Continuity equation
1Crystals
1Current time characteristic
1Data transmission
1Demodulation
1Deposition
1Digital optical switch
1Doping
1Drift diffusion models
1Dynamic conditions
1Dynamic response
1Electric currents
1Electrical characteristic
1Electron density
1Electrooptical mixing
1Energy gap
1Epitaxial layers
1Equivalent circuit
1Etching time
1Fabry-Perot interferometers
1Field distribution
1Finite difference method
1Fourier transforms

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