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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Starck »
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List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000744 (2006) Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers
001010 (2002) Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers
001785 (1999) 1-m W CW-RT monolithic VCSEL at 1.55 μm
001911 (1998) Undercut ridge structures : A novel approach to 1.3/1.55μm vertical-cavity lasers designed for continuous-wave operation
001A04 (1998) GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSELs
001B84 (1997) Undercut ridge structures : A novel approach to 1.3/1.55-μm vertical-cavity surface-emitting lasers
001C65 (1997) High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
001C68 (1997) High performance 1.3 μm SLMQW BRS lasers for 85°C operation
001E69 (1996) Study on the reliability of an InP/InGaAsP integrated laser modulator
002064 (1995-03-01) Direct measurement of lateral elastic modulations in a zero-net strained GaInAsP/InP multilayer
002401 (1994) High FM bandwidth of DBR laser including butt-jointed electro-optical wavelength tuning sections
002606 (1993) Observation by electroabsorption of strain-enhanced interface roughening in GaxIn1-xAs/Ga0.22In0.78As0.48P0.52 quantum wells prepared by gas-source molecular beam epitaxy
002629 (1993) Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator
002634 (1993) Lateral thickness modulations in alternate tensile-compressive strained GaInAsP multilayers grown by gas source molecular beam epitaxy
002635 (1993) Lateral modulations in zero-net-strained GalnAsP multilayers growtn by gas source molecular-beam epitaxy
002668 (1993) Gas source molecular beam epitaxy of alternated tensile/compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
002797 (1992) Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells
002A23 (1991) High quality InP and In1-xGaxAsyP1-y grown by gas source MBE
002B54 (1990) High-purity InP growth by grass sources molecular beam epitaxy (Gsmbe)

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
9Gallium arsenides
8Indium arsenides
7Indium phosphides
6Multiple quantum well
6Semiconductor lasers
6Semiconductor materials
5Gallium Indium Arsenides phosphides Mixed
5Gallium phosphides
5Indium Phosphides
4Epitaxy
4Molecular beam epitaxy
4Quaternary compounds
4Strained quantum well
3Crystal growth
3Infrared radiation
3Inorganic compound
3Molecular beam condensation
3Multilayers
3Semiconductor laser
3Ternary compounds
3Thickness
2Aluminium arsenides
2Binary compound
2Compressive stress
2GSMBE method
2Gallium Arsenides
2Gallium Indium Arsenides Mixed
2Laser diodes
2Mirrors
2Output power
2Quantum wells
2Quaternary compound
2Semiconducting gallium arsenide
2Semiconducting indium phosphide
2Semiconductor growth
2Strains
2Stresses
2TEM
2Theory
2Thin film
2Threshold current
2Transmission electron microscopy
2Vertical cavity laser
1Arsenides phosphides
1Bragg grating
1Bragg mirror
1Broad area
1Butt joint
1Calcium
1Cathodoluminescence
1Chemical composition
1Chirp
1Circuit design
1Congress
1Continuous wave
1Continuous wave lasers
1Crystal growth from vapors
1Current density
1Current injection
1Degradation
1Diaphragm
1Dielectric materials
1Dielectric mirror
1Diffraction grating
1Dislocations (crystals)
1Dispersion
1Distributed Bragg reflection
1Doping profile
1Elasticity
1Electric field
1Electrical characteristic
1Electrical properties
1Electro-optical effects
1Electron mobility
1Electronic structure
1Electrooptical modulator
1Excitons
1Experimental result
1Experiments
1Fabry-Perot resonators
1Far field
1Frequency modulation
1Gallium Arsenides phosphides
1Grating in fiber
1Growth from vapor
1Growth mechanism
1III-V compound
1Indium Arsenides phosphides
1Indium Gallium Arsenic Phosphides Mixed
1Infrared laser
1Infrared spectra
1Injection current
1Injection laser
1Integrated circuit
1Interface phenomena
1Interface structure
1Laser
1Laser pumping
1Light source

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