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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Santinelli »
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C. Sandu < C. Santinelli < C. Sauvan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
002072 (1995-02-15) High electron mobility in pseudomorphic modulation-doped In0.75Ga0.25As/InAlAs heterostructures achieved with growth interruptions
002879 (1992) In situ characterization of InP surfaces after low-energy hydrogen ion cleaning
002890 (1992) Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEM
002919 (1992) Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy
002945 (1991) Rôle de la zone interfaciale dans la qualité des propriétés électriques du système Al2O3/AsInP
002B00 (1990) The passivation of InP by arsenic surface stabilization and Al2O3 deposition : correlations between interface chemistry and capacitance measurements
002D59 (1988) Photoluminescence enhancement of InP treated with activated hydrogen
002E46 (1987) Passivation de la surface de phosphure d'indium par des éléments de la colonne V

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Indium Phosphides
3Inorganic compound
3MIS structure
3Passivation
3Reflection high energy electron diffraction
3Semiconductor materials
3Surface treatment
2Arsenic
2Crystal growth
2Indium Arsenides
2Microelectronic fabrication
2Photoelectron spectrometry
1Aluminium Oxides
1Aluminium arsenides
1Binding energy
1Capacitance
1Carbon
1Characterization
1Chemical bond
1Contamination
1Controlled atmosphere
1Crystal face
1Dangling bond
1Dislocation
1Doped materials
1Doping
1Electrical conductivity
1Electrical properties
1Electron mobility
1Epitaxial film
1Epitaxy
1Fermi level
1Field effect transistor
1Frequency
1Gallium Indium Arsenides Mixed
1Gallium arsenides
1Growth from vapor
1Growth mechanism
1Heat treatment
1Heterostructures
1High temperature
1Hydrogen
1Hydrogen Atomic ions
1Improvement
1Impurity
1Indium arsenides
1Interfaces
1Ions
1Irradiation
1Mismatch lattice
1Modulation
1Molecular beam
1Molecular beam condensation
1Molecular beam epitaxy
1Oxidation
1Oxidation number
1Oxygen
1Phosphorus
1Photoluminescence
1Preparation
1Roughness
1Scattering
1Single crystal
1Solid solid interface
1Structure relaxation
1Substrate
1Surface cleaning
1Temperature range 0-13 K
1Ternary alloys
1Theoretical study
1Voltage capacity curve
1Voltage current curve
1X ray

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "C. Santinelli" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "C. Santinelli" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |clé=    C. Santinelli
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