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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Platz »
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C. Pinquier < C. Platz < C. Platzer-Björkman  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000855 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000857 (2006) Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
000929 (2005) Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000976 (2005) Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
000A08 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000C50 (2003-03-24) Simultaneous two-state lasing in quantum-dot lasers
000D54 (2003) In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP
000D61 (2003) Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D65 (2003) Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Indium arsenides
7Quantum dots
5Experimental study
5III-V semiconductors
4Binary compounds
4Crystal growth from vapors
4Molecular beam epitaxy
4Photoluminescence
3GSMBE method
3Indium phosphides
3Nanostructured materials
2Buffer layer
2Electronic structure
2Emission spectra
2Ground states
2Island structure
2Quantum dot lasers
2Semiconductor lasers
2Semiconductor materials
2Threshold current
1Aluminium arsenides
1Ambient temperature
1Anisotropy
1Atomic force microscopy
1Band splitting
1Charge carrier injection
1Current density
1Density
1Dimensionality
1Doping
1Double layers
1Effective Hamiltonian
1Effective mass model
1Electroluminescence
1Electronic density of states
1Elliptic shape
1Energy gap
1Excited states
1Fourier transformation
1Gallium arsenides
1Gallium phosphides
1Growth mechanism
1Heterojunctions
1Indium compounds
1Inorganic compounds
1Interband transitions
1Laser diodes
1Master equations
1Mathieu function
1Microstructure
1Miniband
1Nanostructures
1Operating mode
1Optical pumping
1Optical transition
1Oscillator strengths
1Overpressure
1Property structure relationship
1Quantum wires
1Quaternary compounds
1Rate equation
1Roughness
1Schroedinger equation
1Self-assembly
1Semiconductor quantum dots
1Size effect
1Stacking sequence
1Subband
1Surfaces
1Ternary compounds
1Theoretical study
1Thickness
1Thin films
1Time resolution
1Variational methods
1Wetting
1quantum dot lasers

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