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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Pautet »
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C. Parmentier < C. Pautet < C. Payen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000396 (2009) Status of p-on-n HgCdTe technologies at DEFIR
000409 (2009) Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation
000571 (2008) HgCdTe FPAs made by Arsenic-ion implantation
000F48 (2002) Phase matching pseudo-resonant tunable InP-based MOEMS
001688 (1999) Optical and mechanical design of an InP based tunable detector for gas sensing applications
001696 (1999) NIR resonant cavity enhanced InP/InGaAs strained quantum well inter-band photo-detector
001783 (1999) 2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Photodetector
3Arsenic
3Experimental result
3Molecular beam epitaxy
3Photodiodes
2Binary compound
2Cavity resonator
2Experimental study
2Focal plane arrays
2Implants
2Indium
2Ion implantation
2LPE
2Optical properties
2Photodetectors
2Quantum well
2Sensor materials
2Ternary compounds
2Tunable circuit
2Waveform
1Absorption spectrometry
1Annealing
1Arsenic addition
1Background noise
1Bragg reflection
1Bragg reflectors
1Cadmium Tellurides
1Cadmium tellurides
1Circuit design
1Circuit simulation
1Crystal growth from vapors
1Damage
1Dark current
1Dislocation loops
1Distributed Bragg reflection
1Electro-optical effects
1Electrooptical effect
1Emission spectrum
1Epitaxial film
1Epitaxial layers
1Fabry Perot resonator
1Far infrared radiation
1Finite element method
1Gallium arsenides
1Gas detector
1Growth mechanism
1Heterojunctions
1II-VI semiconductors
1Indium Phosphides
1Indium addition
1Indium arsenides
1Indium phosphide
1Infrared radiation
1Interband transition
1Interruption
1Leakage current
1Leakage currents
1Light emitting diode
1Liquid phase
1MOVPE method
1Manufacturing
1Material processing
1Matrix method
1Measurement sensor
1Mechanical properties
1Mercury tellurides
1Microelectromechanical device
1Microelectronic fabrication
1Micromachining
1Microoptics
1Mirrors
1Modeling
1Near infrared spectrometry
1Numerical simulation
1Optical circuit
1Optical pumping
1Optical system
1Optimal design
1Organic arsine
1Performance evaluation
1Photodiode
1Precursor
1Quantum efficiency
1Quantum wire
1Radiation detectors
1Resonant cavity enhanced photodetection
1Response functions
1Review
1Reviews
1Saturation
1Secondary ion mass spectrometry
1Semiconducting indium gallium arsenide
1Semiconductor materials
1Semiconductor quantum wells
1Sequence
1Shunt
1Simulation
1Spectrum analysis
1Spontaneous emission
1State of the art

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