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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Monier »
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C. Monat < C. Monier < C. Montes  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001685 (1999) Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates
001B50 (1997-01-15) Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
001C84 (1997) Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
001C94 (1997) Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties
002050 (1995-05-15) Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy
002304 (1994-03-21) Monolayer thickness control of InxGa1-xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy
002414 (1994) Epitaxial growth and kinetic study of mismatched (Ga,In)As/InP layers grown by hydride vapour phase epitaxy
002646 (1993) Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Gallium arsenides
6Indium arsenides
6Quantum wells
5Ternary compounds
4Binary compounds
4Molecular beam epitaxy
4Semiconductor materials
3III-V compound
3III-V semiconductors
3Optical absorption
3Optical properties
3Photoluminescence
3Segregation
3Thickness
2Electronic properties
2Electronic structure
2Epitaxial layers
2Epitaxy
2Excitonic process
2Heterojunctions
1Absorption spectra
1Arsenic compounds
1Blue shift
1Conduction bands
1Crystal growth
1Electroreflection
1Energy-level transitions
1Excitons
1Experimental data
1Film growth
1Gallium Arsenides
1Gallium compounds
1Growth mechanism
1Growth rate
1Heteroepitaxy
1Hydrides
1Impurity distribution
1Indium Arsenides
1Indium compounds
1Indium phosphides
1Kinetics
1Line widths
1Measuring methods
1Microelectronic fabrication
1Mismatch lattice
1Organometallic compounds
1Oscillator strengths
1Reflection spectrum
1Reflectivity
1Semiconductor quantum wells
1Size effect
1Spectral shift
1Strained layer
1Strained superlattice
1Strains
1Stresses
1Surface structure
1Temperature dependence
1Temperature effects
1Temperature range 0000-0013 K
1Theoretical study
1Thermo-optical effects
1Thin films
1VPE
1Wave functions

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "C. Monier" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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