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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Mathieu »
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C. Masquelier < C. Mathieu < C. Mattevi  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000021 (2013) Stability of InP oxide versus solvated electrons in liquid ammonia
000031 (2013) Phosphazene like film formation on InP in liquid ammonia (223 K)
000261 (2010) The pH response of the InP/liquid ammonia interface at 223 K: A pure nernstian behavior
000360 (2010) An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia
000574 (2008) First evidence of stable P-N bonds after anodic treatment of InP in liquid ammonia : A new III-V material passivation route
000883 (2005) Study of the flat band potential of inp in liquid ammonia : A nernstian behavior?
000956 (2005) Growth of porous InP in acidic liquid ammonia
000F10 (2002) Study of a thin anodic oxide on n-InP by photocurrent transient, capacitance measurements and surface analysis
001183 (2001) Oxygen reduction mechanism in acidic liquid ammonia (223 K) : Contribution of Pt microelectrodes and III-V semiconductors
001682 (1999) Oxygen reduction mechanisms at p-InP and p-GaAs electrodes in liquid ammonia in neutral buffered medium and acidic media
001A12 (1998) Electrochemical characterisation of a semiconductor-metal junction : n-type InP|Cu; influence of the structure of the metallic layer
001C88 (1997) Effect of copper coating on the behaviour of p-InP electrodes
001D00 (1997) Cathodic decomposition of n-InP during hydrogen evolution in liquid ammonia
002520 (1993) n-InP flat band potential : a pH probe in nonaqueous and mixed solvents ?
002D88 (1988) In situ modification of the energetic structure of the n-GaP/NH3 junction in the presence of solvated electrons

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
8Indium phosphide
7Indium Phosphides
5Electrochemical reaction
5Electrodes
5Liquid ammonia
4Acidic solution
4III-V semiconductors
3Ammonia
3Flat band voltage
3III-V compound
3Photoelectric current
3Photoelectrochemistry
3Reaction mechanism
3Semiconductor materials
3pH
2Aqueous solution
2Basic solution
2Binary compound
2Chemical reduction
2Copper
2Crystal orientation
2Electrodeposition
2Interface
2Medium effect
2N type conductivity
2Non aqueous solution
2Non aqueous solvent
2Oxidation
2Oxygen
2Passivation
2Photoelectron spectrometry
2Single crystal
2Stability
2Sulfuric acid
2X ray
2X-ray photoelectron spectra
2p type semiconductor
1Acid base balance
1Anodic oxide
1Anodizing
1Aprotic solvent
1Capacitance
1Concentration effect
1Copper II Sulfates
1Copper Sulfates
1Corrosion
1Crystal face
1Current density
1Cyclic voltammetry
1Electrochemical treatment
1Electrode reaction
1Electrolyte solution
1Energy diagram
1Formation mechanism
1Gallium Arsenides
1Gallium Phosphides
1Gas release
1Growth mechanism
1Hydrogen
1Inorganic compound
1Inorganic compounds
1Liquid
1Liquid phase deposition
1Liquid state
1Microelectrode
1Modified material
1Monolayers
1Morphology
1N type semiconductor
1Nernst effect
1Nitrogen additions
1Nucleation
1Numerical data
1Operating conditions
1Organic solution
1Organic solvent
1Oxides
1P type semiconductor
1Photoelectrode
1Photoelectron spectroscopy
1Photoluminescence
1Platinum
1Porous material
1Potassium Hydroxides
1Potentiometric method
1Protic solvent
1Radiative recombination
1Rotating disk electrode
1Rotation speed
1Saline solution
1Scanning electron microscopy
1Semiconductor electrolyte interface
1Silicon
1Solvated electron
1Surface structure
1Surface termination
1Surface treatments
1Theoretical study
1Thin films

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