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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Licoppe »
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C. Lhomer < C. Licoppe < C. Linares  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
002643 (1993) Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films
002731 (1993) Bulk and surface properties of RTCVD Si3N4 films for optical device applications
002912 (1992) Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition
002A99 (1990) Thermal and photon-assisted interaction of ammonia, silane and oxygen with indium phosphide substrates
002B98 (1990) A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications
002D36 (1988) Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator-semiconductor devices
002D42 (1988) Solid phase recrystallization of implanted III-V semiconductors under uniaxial stress
002D75 (1988) Low-pressure photochemical vapour deposition of silicon dioxide on InP substrates
002E92 (1987) Recrystallization kinetics pattern in III-V implanted semiconductors
002F90 (1986) Solid phase epitaxial regrowth of ion-implanted amorphized InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
5Indium Phosphides
4Chemical vapor deposition
3Inorganic compound
3Recrystallization
3Silicon Oxides
3Thin film
2Amorphization
2CVD
2Deposition
2Epitaxy
2Gallium Indium Arsenides Mixed
2Indium phosphides
2Ion implantation
2Thin films
2Ultraviolet radiation
1AES
1Arsenic Atomic ions
1Auger electron spectrometry
1Binary compounds
1CV characteristic
1Characterization
1Chemical bonds
1Chemical composition
1Chromium
1Crystal growth
1Defects
1Dielectric materials
1ESR
1Electron diffraction
1Ellipsometry
1Group IIIB metal Antimonides
1Group IIIB metal Arsenides
1Group IIIB metal Phosphorus
1Growth from solid state
1Heteroepitaxy
1III-V compound
1III-V semiconductors
1Impurity
1Infrared absorption
1Infrared spectra
1Infrared spectrometry
1Interface
1Iron
1Kinetics
1MIS junctions
1MIS structure
1Mechanical stress
1Microelectronic fabrication
1Misfit dislocation
1Morphology
1Nitrogen additions
1Optical properties
1Oscillation modes
1Oxide layer
1Photochemical method
1Photochemical reaction
1Photodoping
1Photoelectron spectrometry
1Rapid thermal annealing
1Refractive index
1Semiconductor materials
1Silica
1Silicon nitrides
1Silicon oxides
1Solid solution
1Stacking fault
1Substrate
1Supports
1Surface analysis
1Technology
1Temperature
1Thermal annealing
1Thickness
1Transmission electron microscopy
1Uniaxial stress
1Vacancies
1Voltage capacity curve

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "C. Licoppe" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "C. Licoppe" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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