C. Kammerer < C. Kazmierski < C. Kermel

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000659 (2007)		Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy
000B96 (2004)		42 GHz bandwidth InGaAlAs/InP electro absorption modulator with a sub-volt modulation drive capability in a 50 nm spectral range
001363 (2000)		Diodes électroluminescentes à microcavité pour le contrôle de l'émission spontanée
001671 (1999)		Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001704 (1999)		MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001789 (1999)		+55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001F45 (1996)		Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber
002171 (1995)		High temperature characteristics T0 and low threshold current density of 1.3μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
002218 (1995)		8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
002524 (1993)		Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation
002791 (1992)		Universal iron behaviour in Zn-, Cd- and Be-doped p-type InP
002821 (1992)		Phase-amplitude coupling factor of single-mode gain-switched InGaAsP laser diodes
002837 (1992)		New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product
002855 (1992)		Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002882 (1992)		Highly thermally stable, high-performance InGaAsP : InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
002885 (1992)		High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasers
002991 (1991)		Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching technique
002A07 (1991)		MBE growth of graded index AlGaInAs MQW lasers on InP
002A21 (1991)		High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
002A32 (1991)		First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
002B36 (1990)		Low-threshold GRIN-SCH AlGaInAs 1•55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
9	Experimental study
9	Indium Phosphides
8	Semiconductor laser
7	Multiple quantum well
5	Inorganic compound
4	Aluminium Gallium Indium Arsenides Mixed
4	Crystal growth
4	Epitaxy
4	III-V compound
4	Injection laser
4	Organometallic compound
3	Buried laser
3	Distributed feedback laser
3	Gallium Indium Arsenides Mixed
3	Gallium Indium Arsenides phosphides Mixed
3	Gallium arsenides
3	Growth from vapor
3	Indium arsenides
3	Laser
3	Semiconductor lasers
3	Semiconductor materials
3	Ternary compound
3	Zinc
2	Aluminium arsenides
2	Binary compound
2	Cadmium
2	Circuit design
2	Current density
2	Diffusion
2	Experiments
2	GRIN SCH laser
2	Gallium Arsenides
2	Interstitial
2	Iron
2	Microelectronic fabrication
2	Molecular beam condensation
2	Optical properties
2	Performance characteristic
2	Quantum well lasers
2	Secondary ion mass spectrometry
2	Semiconducting indium compounds
2	Semiconducting indium phosphide
2	Silicon
2	Strained quantum well
2	Theoretical study
2	Theory
2	Thin film
2	Transfer characteristic
1	Absorption spectrum
1	Acceptor center
1	Aluminium Arsenides
1	Aluminium antimonides
1	Arsenic Phosphides
1	Assay
1	BRS laser
1	Bandwidth
1	Beryllium
1	CW lasers
1	Charge carrier concentration
1	Chemical beam condensation
1	Chemical diffusion
1	Chemical vapor deposition
1	Chirp
1	Codoping
1	Concentration distribution
1	Coupling factor
1	Crystal lattices
1	Current-optical power characteristic
1	Distributed Bragg reflector
1	Distributed Bragg reflector lasers
1	Doping
1	Electrical characteristic
1	Electroabsorption modulator
1	Emission spectrum
1	Etching
1	Eye diagram
1	Feedback laser
1	Field effect transistor
1	Frequency characteristic
1	Gain
1	Gain measurement
1	Gallium Phosphides
1	Gallium antimonides
1	Growth from liquid
1	Heat resistance
1	Heat treatment
1	High temperature service behaviour
1	III-V semiconductors
1	Impurity
1	Impurity distribution
1	Indium Arsenides
1	Indium Gallium Arsenides phosphides Mixed
1	Infrared laser
1	Injection current
1	Inorganic compounds
1	Integrated optoelectronics
1	Ion beam
1	Lamellar structure
1	Laser pulses
1	Light absorption

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