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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Grattepain »
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C. Gras < C. Grattepain < C. Graver  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001234 (2001) In situ etching at InGaAs/GaAs quantum well interfaces
001236 (2001) Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability
001691 (1999) New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures
001765 (1999) Carrier capture in InGaN quantum wells and hot carrier effects in GaN
001F36 (1996) Growth and characterisation of InP by close vapor transport
002307 (1994-03-14) Mg doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium
002704 (1993) Donor activation efficiency and doping profile quality in In-doped CdTe and CdZnTe quantum structures
002870 (1992) Indium doping of CdTe layers and CdTe/Cd1-xZnxTe microstructures
002871 (1992) Indium doping of CdTe and Cd1-xZnxTe by molecular-beam epitaxy : uniformly and planar-doped layers, quantum wells, and superlattices
002A03 (1991) Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
002A19 (1991) Hydrogenation of InAs on GaAs heterostructures
002B53 (1990) Hydrogen neutralization of acceptors in highly doped GaInAs:Zn

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
6Semiconductor materials
5Photoluminescence
4Secondary ion mass spectrometry
3Binary compounds
3Charge carrier concentration
3Doping
3Epitaxy
3Gallium arsenides
3Hall effect
3Molecular beam condensation
2Cadmium Tellurides
2Cadmium Zinc Tellurides Mixed
2Carrier density
2Charge carrier mobility
2Epitaxial film
2Gallium Arsenides
2Heterojunction
2Hydrogen
2Hydrogenation
2Impurity
2Impurity density
2Indium
2Indium arsenides
2Indium phosphides
2Inorganic compound
2Isotopic species
2Quantum well
2Quantum wells
2SIMS
2Temperature
2Ternary compounds
2Thin film
1Acceptor center
1Activation energy
1Aluminium arsenides
1Annealing
1Arsenic chlorides
1Binary compound
1Boundary conditions
1Carbon addition
1Charge carrier recombination
1Chemical beam epitaxy
1Chemical etching
1Concentration distribution
1Crystal defect
1Crystal doping
1Crystal growth
1Crystal growth from vapors
1Crystal structure
1Defect level
1Degradation
1Donor center
1Doping profile
1Electron temperature
1Electronic density of states
1Epitaxial layers
1Free carrier
1Free electron
1Gallium Indium Arsenides Mixed
1Gallium Indium Phosphides
1Gallium nitrides
1Gallium phosphide
1Gallium phosphides
1Growth rate
1Heterojunction bipolar transistors
1Heterostructures
1Hole mobility
1Hot carriers
1III-V semiconductors
1Impurity diffusion
1Impurity interaction
1In situ
1Indium Arsenides
1Indium nitrides
1Indium phosphide
1Infrared absorption
1Infrared reflection
1Kinetics
1Magnesium additions
1Neutralization
1P-type conductors
1Passivation
1Photoelectron emission
1Photoelectron spectrometry
1Planar doping
1Recovery(properties)
1Reliability
1Segregation
1Semiconductor devices
1Solid-solid interfaces
1Superlattice
1Surface states
1Surface treatments
1Temperature effects
1Ternary alloys
1Ternary compound
1Thermal annealing
1Thick film
1VPE

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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