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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Gaquiere »
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C. Gaonach < C. Gaquiere < C. Gardes  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000598 (2008) Ballistic nanodevices for high frequency applications
000954 (2005) High performances of InP channel power HEMT at 94 GHz
000A22 (2005) 94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
001251 (2001) Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements
001441 (2000) High-power GaN MESFET on sapphire substrate
001569 (1999-05-24) Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications
001715 (1999) Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001991 (1998) InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
001997 (1998) High power added efficiency at 35GHz on InP DH HEMTs
001A29 (1998) Best combination between power density, efficiency, and gain at V-band with an InP-based PHEMT structure
001B70 (1997) Etude de la détermination de schémas équivalents de transistors sur InP pour la conception d'amplificateurs de puissance à 60 GHz
002451 (1994) 1W/mm power pseudomorphic HFET with optimised recess technology
002727 (1993) Characterization of GaAs and InGaAs double-quantum well heterostructure FET's

List of associated KwdEn.i

Nombre de
documents		Descripteur
6High electron mobility transistors
5High electron mobility transistor
4Experimental study
4Indium phosphide
4Transconductance
3Current density
3Gallium Arsenides
3Gallium arsenides
3III-V compound
3Semiconductor doping
3Ternary compound
3Theory
2Binary compound
2Composite material
2Drain voltage
2Electric breakdown
2Electrical characteristic
2Experiments
2Field effect transistor
2GHz range
2Heterojunction transistor
2High performance
2Indium Arsenides
2Indium Phosphides
2Indium arsenides
2Output power
2Performance evaluation
2Power gain
2Power transistor
2Quantum well
2Semiconducting gallium arsenide
1Aluminium Arsenides
1Aluminium compounds
1Aluminum alloys
1Ambient temperature
1Ballistic transport
1Breakdown voltage
1Composition effects
1Current rectifier
1Cut off frequency
1Dielectric thin films
1Dislocations (crystals)
1Electric breakdown of solids
1Electric current control
1Electric fields
1Electric potential
1Electric power measurement
1Electrical properties
1Electron mobility
1Electron transport properties
1Energy gap
1Enhancement-mode (E-mode) devices
1Epilayers
1Equivalent circuit
1Frequency characteristic
1Gallium Indium Arsenides Mixed
1Gallium nitride
1Gate current
1Gates (transistor)
1Heterojunction
1Heterojunctions
1High density
1High frequency
1High power
1Hydrodynamics
1III-V semiconductors
1Impact ionization
1Indium compounds
1Lithography
1MOSFET
1Measurement
1Metal semiconductor field effect transistor
1Metamorphic buffer layers
1Metamorphic high-electron mobility transistor (MM-HEMT)
1Microelectronic fabrication
1Microwave circuit
1Microwave power transistors
1Modelling
1Molecular beam epitaxy
1Monolithic integrated circuit
1Monte Carlo methods
1Nanoelectronics
1Nanostructures
1Nanotechnology
1Optimization
1PECVD
1Passivation
1Performance characteristic
1Power added efficiency
1Power added efficiency (PAE)
1Power amplifier
1Power density
1Production process
1Raman spectra
1Sapphire
1Schottky barrier diodes
1Semiconducting aluminum compounds
1Semiconducting indium
1Semiconducting indium gallium arsenide
1Semiconducting indium phosphide

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