Serveur d'exploration sur l'Indium - Analysis (France)

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C. Fiorini < C. Fontaine < C. Fortin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000525 (2008) Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 μm laser applications
000583 (2008) Effect of thermal annealing on the electrical properties of indium tin oxide (ITO) contact on Be-doped GaAs for optoelectronic applications
000C54 (2003-03-01) In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
000D90 (2003) Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties
000E01 (2003) Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
002155 (1995) Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP

List of associated KwdEn.i

Nombre de
documents
Descripteur
4Photoluminescence
3Gallium arsenides
3Semiconductor quantum wells
2Experimental study
2Experiments
2III-V semiconductors
2Nitrides
2Optical properties
2Photoconductivity
1Band anticrossing model
1Band structure
1Beryllium additions
1Binary compound
1Calculations
1Carrier concentration
1Contact resistance
1Crystal defects
1Crystal orientation
1Diffusion
1Dilute nitrides
1Doping
1Effective mass
1Electric contacts
1Electrical properties
1Electron mobility
1Excitons
1Fermi level
1Gallium Arsenides
1Gallium Nitrides
1Gallium compounds
1Hall mobility
1Hamiltonians
1III-V compound
1IV characteristic
1Indium Arsenides
1Indium Nitrides
1Indium Phosphides
1Indium compounds
1Indium tin oxide electrode
1Interface states
1Laser materials
1Light polarization
1Mathematical models
1Molecular beam epitaxy
1Monochromators
1Nitrogen
1Optical dipole moments
1Optical gain
1Optical materials
1Photocurrent spectroscopy
1Photocurrents
1Photodiodes
1Properties of materials
1Quantum wells
1Quaternary compounds
1Red shift
1Secondary ion mass spectra
1Secondary ion mass spectrometry
1Semiconducting gallium arsenide
1Semiconducting gallium compounds
1Semiconducting gallium indium nitrogen arsenide
1Semiconducting indium compounds
1Semiconductor device structures
1Semiconductor lasers
1Semiconductor materials
1Silicon
1Spin relaxation
1Temperature dependence
1Theory
1Thermal annealing
1Time resolved spectra
1Wide band gap semiconductors

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