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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Deparis »
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C. Denker < C. Deparis < C. Dernazaretian  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000B09 (2004) Near band edge emission of MBE grown ZnO epilayers: identification of donor impurities and O2 annealing effects
001955 (1998) Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy
001A47 (1997-12-15) Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells
001B38 (1997-04-01) Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces
001C52 (1997) Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures
001D86 (1996-06-17) Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
002044 (1995-06-19) Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures
002050 (1995-05-15) Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy
002140 (1995) Origin of the blue shift observed in highly strained (Ga, In)As quantum wells grown on GaAs(001) vicinal surfaces
002304 (1994-03-21) Monolayer thickness control of InxGa1-xAs/GaAs quantum wells grown by metalorganic molecular beam epitaxy
002345 (1994) Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
9Gallium arsenides
9Photoluminescence
6III-V semiconductors
6Indium arsenides
6Quantum wells
5Ternary compounds
3Binary compounds
3Chemical beam epitaxy
3Molecular beam epitaxy
3Surface segregation
2Binding energy
2Crystal growth from vapors
2Epitaxial layers
2Excitons
2Gallium phosphides
2Indium compounds
2Indium phosphides
2Semiconductor quantum wells
2Temperature dependence
2Thickness
1Annealing
1Blue shift
1Bound exciton
1Charge carriers
1Controlled atmospheres
1Crystal orientation
1Dislocations
1Disorientation
1Donor center
1Doping
1Elasticity
1Electronic structure
1Excitation spectrum
1Excited states
1Film growth
1Gallium compounds
1Heterojunctions
1Impurities
1Indium additions
1Inorganic compounds
1Ion exchange
1Line widths
1Magnetic field effects
1Magneto-optical effects
1Morphology
1Multilayers
1Organometallic compounds
1Plastic deformation
1Quantity ratio
1Recombination
1Reflectivity
1Roughness
1Schroedinger equation
1Segregation
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor materials
1Spectral shift
1Stokes shift
1Strains
1Stress relaxation
1Surface reconstruction
1TEM
1Temperature effects
1Temperature range 0000-0013 K
1Theoretical study
1Thermo-optical effects
1Thin films
1Zinc oxides

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