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Index « Auteurs » - entrée « C. Brylinski »
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C. Bruneel < C. Brylinski < C. C. Becerra  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001424 (2000) Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD : application to GaInP/GaAs heterojunction bipolar transistor base layer
002337 (1994) Croissance LP-MOCVD de structures transistor bipolaire à hétérojonction GaInP/GaAs
002378 (1994) Microwave components and subassemblies for millimeter wave applications
002391 (1994) LP-MOCVD grown GaInP/GaAs HBTs for VCOs and power amplifier MMICs
002405 (1994) GaInP-GaAs heterojunction bipolar transistors grown by low pressure metalorganic chemical vapour deposiion for voltage-controlled oscilators and power amplifier microwave monolithic integrated circuits
002605 (1993) Observation of a two dimensional hole gas in a GaInP/GaAs heterojunction
002709 (1993) Defects in epitaxial Si-doped GaInP
002737 (1993) Band offset of GaAs-GaInP heterojunctions
002814 (1992) Resonant tunneling of holes in Ga0.51In0.49P/GaAs double-barrier heterostructures
002851 (1992) Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
002895 (1992) Ga1-xInxAs/InAsyP1-y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD
002A30 (1991) First microwave characterization of LP-MOCVD grown GaInP/GaAs self-aligned HBT
002B95 (1990) A new realisation of Schottky diodes on n-type Inp
002C58 (1989) Low-pressure metalorganic chemical vapor deposition growth and characterization of δ-doped InP
003074 (1985) Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor deposition
003115 (1984) High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Gallium Arsenides
7Indium Phosphides
5Heterojunction transistor
4Chemical vapor deposition
4Gallium Indium Phosphides Mixed
4Heterojunction
4Organometallic compound
4Semiconductor materials
3Binary compound
3Gallium arsenides
3Inorganic compound
3Low pressure
3Microelectronic fabrication
3Photoluminescence
3Semiconductor device
3Ternary compound
3X ray diffraction
2CV characteristic
2Characterization
2Epitaxy
2Gallium phosphide
2Gallium phosphides
2Gunn diode
2Hole
2III-V compound
2Indium phosphide
2Indium phosphides
2Manufacturing process
2Microwave transistor
2Millimetric wave
2Schottky barrier diode
2Temperature dependence
2Ternary compounds
2Thin film
2Transistor
2Voltage capacity curve
2Voltage current curve
11/f noise
1Band offset
1Barrier height
1Binary compounds
1Bipolar transistor
1Buffer layer
1Carbon addition
1Carrier density
1Charge carrier concentration
1Charge carrier mobility
1Charge carrier recombination
1Charge carriers
1Circuit design
1Conduction bands
1Cross sections
1Crystal growth
1Current gain
1DLTS
1Defect states
1Diode
1Donors
1Doped materials
1Doping
1Electric field effects
1Electrical characteristic
1Electrical properties
1Epitaxial film
1Frequency response
1Gallium Indium Arsenides Mixed
1Gallium Indium Phosphorus Mixed
1Gallium Phosphides
1Growth from vapor
1Hall effect
1Hall mobility
1Heterojunction bipolar transistors
1IMPATT diode
1IV characteristic
1Impurity
1Impurity density
1Indium Arsenides phosphides
1Interface structure
1Ionization potential
1Lamellar structure
1Leakage current
1Low temperature
1MOCVD
1Microelectronics
1Microstructure
1Microwave
1Microwave circuit
1Microwave device
1Mismatch lattice
1Monolithic integrated circuit
1Negative differential conductivity
1Noise spectrum
1Optical microscopy
1Optical properties
1Output power
1Performance
1Performance characteristic
1Photoconductivity
1Photodiode

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