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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Bru »
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C. Broussillou < C. Bru < C. Bru Chevallier  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
001F48 (1996) Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well
002135 (1995) Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002615 (1993) Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors : physical limitations at ultrashort gate length
002B41 (1990) Interfacial traps in Ga0.47In0.53As/InP heterostructures
002E74 (1987) Surface charge effects on planar submicrometer GaAs and InP devices

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
4Semiconductor materials
3Gallium Arsenides
3Gallium Indium Arsenides Mixed
3Indium arsenides
3Molecular beam epitaxy
3Ternary compounds
3Thin films
2Aluminium arsenides
2Binary compounds
2Charge carrier concentration
2Indium phosphides
2Photoluminescence
1Activation energy
1Aluminium Gallium Arsenides Mixed
1Aluminium Indium Arsenides
1Amplitude phase
1Band structure
1Bias voltage
1Binary compound
1Charge carrier mobility
1Charge carrier trapping
1Conduction band
1Crystal growth
1Crystal perfection
1Curvature
1Deep level
1Depletion layer
1Electrical characteristic
1Electrodes
1Electron hole pair
1Enhancement layer
1Epitaxial layers
1Gallium arsenides
1Heterojunction
1High electron mobility transistor
1III-V compound
1Illumination
1Impurity
1Indium Arsenides
1Indium Phosphides
1Indium Phosphine
1Infrared radiation
1Interband transition
1Interfaces
1Iron
1Least squares method
1Line widths
1Low temperature
1Measurement method
1Modeling
1Monte Carlo method
1Operation study
1Optical reflection
1Optical transition
1Phase transformation
1Piezoelectric constant
1Planar technology
1Plasma etching
1Polar semiconductor
1Proximity effect
1Quantum well
1Quantum wells
1Recrystallization
1Semiconductor device
1Simulation
1Solid solid interface
1Solid state device
1Space charge
1Spectral reflectance
1Static conditions
1Strained quantum well
1Surface cleaning
1Surface electron state
1Surface treatments
1Surfaces
1Temperature
1Temperature dependence
1Temperature range 400-1000 K
1Ternary compound
1Thermodesorption
1Two dimensional model
1Voltage current curve

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