Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. Alibert »
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C. Algani < C. Alibert < C. Amory  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000B23 (2004) Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
000D52 (2003) InAs/AlSb quantum cascade lasers operating at 6.7 μm
001442 (2000) High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers
001533 (1999-09-27) Anisotropic propagation of light in planar waveguides containing InGaAs-InP quantum wells
001593 (1999-02-01) Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy
001A98 (1997-08-11) Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
001D34 (1996-11-11) Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm
001D64 (1996-08-26) Response to ′′Comment on ′Accurate refractive index measurements of doped and undoped InP by a grating coupling technique′ ′′ [Appl. Phys. Lett. 69, 1332 (1996)]
001E21 (1996-03-15) New III-V semiconductor lasers emitting near 2.6 μm
001E26 (1996-03) Mesure des indices de réfraction de semiconducteurs III - V en structure guide d'onde
001F52 (1996) Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy
002096 (1995) Indice de réfraction de GaSb, Ga0,88In0,12As0,1Sb0,9 de 2100 nm à 2160 nm
002397 (1994) High-power low-threshold Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53As0.04Sb0.96 double heterostructure lasers grown by liquid phase epitaxy
002628 (1993) Low temperature photoluminescence spectra of Ga0.77In0.23As0.19Sb0.81 compounds
002854 (1992) Liquid phase epitaxy and characterization of InAs1-x-ySbxPy on (100) InAs
002876 (1992) InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range
002946 (1991) Préparation et étude de diodes laser à GalnAsSb-GaAlAsSb fonctionnant en continu à 80K
002C01 (1990) 2.5 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy
002E24 (1988) Characteristic temperature T0 of Ga0.83In0.17As0.15Sb0.85/Al0.27Ga0.73As0.02Sb0.98 injection lasers

List of associated KwdEn.i

Nombre de
documents
Descripteur
15Experimental study
7Semiconductor materials
5Gallium arsenides
5Photoluminescence
4Gallium antimonides
4III-V semiconductors
4Indium antimonides
4Indium arsenides
4Infrared radiation
3Binary compounds
3Energy gap
3Epitaxy
3Indium Arsenides
3Indium compounds
3Inorganic compound
3Quantum well lasers
3Quaternary compounds
3Semiconductor laser
3Semiconductor lasers
3Temperature
2Aluminium Gallium Antimonides arsenides Mixed
2Arrhenius equation
2Current density
2Double heterojunction
2Electroluminescence
2Experiments
2Gallium Antimonides
2Gallium Arsenides
2Gallium Indium Antimonides arsenides Mixed
2Gallium compounds
2Growth from liquid
2III-V compound
2Injection laser
2Molecular beam epitaxy
2Quaternary compound
2Semiconductor quantum wells
2Thickness
1Activation energy
1Aluminium Antimonides
1Aluminium antimonides
1Aluminium arsenides
1Aluminum antimonide
1Ambient temperature
1Antireflection coatings
1Band offset
1Band splitting
1Binary compound
1Blue shift
1CW laser
1CW lasers
1Cavity resonator
1Characterization
1Charge carrier recombination
1Chemical composition
1Compressive stress
1Conduction bands
1Continuous wave lasers
1Crystal growth
1Current voltage characteristics
1Diffraction grating
1Effective mass model
1Electrical properties
1Electron tunneling
1Electroreflection
1Excitons
1Free carrier
1Gallium Indium Antimonides arsenides
1Gallium Indium Arsenides Mixed
1Heteroepitaxy
1Heterostructures
1High internal quantum efficiency
1Indium Antimonides arsenides phosphides
1Indium Phosphides
1Indium arsenide
1Infrared laser
1Infrared spectra
1Integrated optoelectronics
1Interface states
1Laser modes
1Light emission
1Light emitting diodes
1Light propagation
1Line shape
1Liquid phase
1Low temperature
1Low threshold current density
1Measurement method
1Negative differential resistance
1Negative resistance
1Non radiative recombination
1Ohmic contacts
1Optical dispersion
1Optical planar waveguides
1Optical polarization
1Optical properties
1Optical transition
1Optical waveguides
1Output power
1Peltier effect
1Phase diagram

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