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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « C. A. Sebenne »
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C. A. Kuhnen < C. A. Sebenne < C. A. Tran  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
001753 (1999) Effect of Cu on InSe/Si(111) heterojunctions
001769 (1999) Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy
001944 (1998) Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces
001F18 (1996) Interface properties of MBE grown InSe/Si(111) heterojunctions
002962 (1991) Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP : a valence-band contribution
002D80 (1988) Interaction of atomic hydrogen with cleaved InP. I: The adsorption stage
002D81 (1988) Interaction of atomic hydrogen with cleavage InP. II: The decomposition stage
002D82 (1988) Interaction of atomic hydrogen with InP(100): comparison with the cleaved surface interaction
002D89 (1988) Hydrogen-induced contamination of III-V compound surfaces
002E08 (1988) Electronic properties of cleaved CdTe(110) surfaces

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
6Inorganic compound
5Indium Phosphides
5Semiconductor materials
5Ultraviolet radiation
4Adsorption
4Cleavage
4Crystal face
4Electron energy loss spectrum
4Indium selenides
4Photoelectron emission
3Band structure
3Heterojunctions
3LEED diffraction
3Photoelectron spectroscopy
3Surface electron state
3Surface structure
2AES
2Adsorption structure
2Auger electron spectrometry
2Binary compounds
2Chemical decomposition
2Hydrogen
2Hydrogen Atoms
2LEED
2Molecular beam epitaxy
2Non metal
2Photoelectron spectrum
2Single crystal
2Surface reconstruction
2Yield
1Annealing
1Band bending
1Band offset
1Brillouin zones
1Cadmium Tellurides
1Chemical bond
1Clean surface
1Contamination
1Copper
1Covalent bond
1Coverage rate
1Crystal growth from vapors
1Dangling bond
1Desorption
1Dispersion relations
1Electronic structure
1Energy gap
1Gallium Arsenides
1Gamma phase
1Growth mechanism
1Hydrogen Atomic ions
1Hydrogen Molecular ions
1III-V compound
1III-VI semiconductors
1Impurity
1Indium
1Inorganic adsorbate
1Interface structure
1Ion polishing
1Island structure
1Molecular dissociation
1Oxygen
1Sequential method
1Silicon
1Synchrotron radiation
1Thermal annealing
1Thin films
1Transition metal Compounds
1Ultrahigh vacuum
1Vacancy
1Valence band
1Yields

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "C. A. Sebenne" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "C. A. Sebenne" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |area=    IndiumV3
   |flux=    France
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   |clé=    C. A. Sebenne
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