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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Vinter »
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B. Vilquin < B. Vinter < B. Vuillemin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000C96 (2003) Strategy for the design of a non-cryogenic quantum infrared detector
000D16 (2003) Optimization, design and fabrication of a non-cryogenic quantum infrared detector
000E27 (2002-10-28) Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
000E46 (2002-07-15) Auger recombination in narrow-gap semiconductor superlattices
001061 (2001-11-15) Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices
001117 (2001-02-19) InAs/AlSb quantum-cascade light-emitting devices in the 3-5 μm wavelength region
001208 (2001) MBE growth of room-temperature InAsSb mid-infrared detectors
001327 (2000-07-17) Room temperature InAsSb photovoltaic midinfrared detector
001415 (2000) Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb
001A45 (1997-12-29) Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser
001B03 (1997-07-15) Optical probing of interface roughness in resonant tunneling structures
001F20 (1996) Inter-landau level tunneling in an InGaAs/AlAs/GaAs structure under tilted magnetic field
002292 (1994-05-01) Resonant tunneling structures with local potential perturbations
002665 (1993) Giant photovoltage of semiconductor heterostructures
002877 (1992) In0.1Ga0.9As/GaAs/AlAs pseudomorphic resonant tunneling diodes integrated with airbridge

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
9III-V semiconductors
7Indium compounds
5Aluminium compounds
5Gallium arsenides
5Theoretical study
4Indium arsenides
4Ternary compounds
4Tunnel effect
3Heterojunctions
3Interface states
3Molecular beam epitaxy
3Semiconductor materials
3Semiconductor superlattices
2Band structure
2Binary compounds
2Carrier lifetime
2Charge carrier recombination
2Electron-hole recombination
2Indium antimonides
2Infrared detector
2Infrared detectors
2Interface structure
2Microelectronic fabrication
2Photoluminescence
2Photovoltaic effect
2Resonance
2Semiconductor epitaxial layers
2Ternary compound
2k.p calculations
1Adsorption
1Aluminium Arsenides
1Aluminium arsenides
1Approximate method
1Arsenic Antimonides
1Auger effect
1Capacitance
1Carrier density
1Cesium additions
1Characterization
1Charge carrier generation
1Composition effect
1Current density
1Design
1Design for manufacture
1Diode
1Doping
1Electroluminescence
1Electroluminescent devices
1Electron emission
1Electron transfer
1Energy barrier
1Energy gap
1Etching
1Fabrication
1Fabrication property relation
1Fourier transform spectroscopy
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Heterostructures
1III-V compound
1IV characteristic
1Indium Antimonides arsenides
1Indium Arsenides Antimonides
1Indium phosphides
1Infrared spectra
1Instrumentation
1Landau levels
1Laser transitions
1Light absorption
1Line intensity
1Line widths
1Lithography
1Magnetic field effects
1Measurement
1Mid infrared radiation
1Narrow band gap semiconductors
1Numerical simulation
1Optimization
1Optoelectronic devices
1Oxygen additions
1Patterning
1Photoconductivity
1Photodetector
1Photodetectors
1Photovoltaic effects
1Potentials
1Quantum interference phenomena
1Quantum well lasers
1RESONANT TUNNELING
1RHEED
1Resonant tunnel effect
1Semiconductor device
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor lasers
1Semiconductor quantum wells
1Simulation
1Surface cleaning
1Surface segregation

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