Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Theys »
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B. Thevenard < B. Theys < B. Tomlinson  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000A97 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
000A98 (2004) Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
001722 (1999) Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001723 (1999) Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopants
001864 (1998-05-18) Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001938 (1998) Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001956 (1998) Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide
001A74 (1997-10-01) Channel optical waveguides formed by deuterium passivation in GaAs and InP
001A84 (1997-09-29) Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001C76 (1997) Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
001D68 (1996-08-15) Transport properties of hydrogenated p-GaInAs doped with carbon
002675 (1993) Experimental study of the hydrogen complexes in indium phosphide
002A19 (1991) Hydrogenation of InAs on GaAs heterostructures
002B53 (1990) Hydrogen neutralization of acceptors in highly doped GaInAs:Zn
002C69 (1989) Hydrogen passivation of shallow acceptors in p-type InP
002D60 (1988) Photoelectrochemical measurement of effective diffusion length of carriers in lamellar semiconductors. Application to InSe

List of associated KwdEn.i

Nombre de
documents
Descripteur
11Experimental study
8Hydrogenation
7Photoluminescence
6Passivation
5Hydrogen
5III-V semiconductors
4Semiconductor materials
3Acceptor center
3Gallium arsenides
3Indium compounds
3Isotopic species
3Optical losses
2Beryllium additions
2Charge carrier
2Charge carrier concentration
2Doped materials
2Gallium Arsenides phosphides
2Gallium Indium Arsenides Mixed
2Hall effect
2Heterojunction
2III-V compound
2Impurity diffusion
2Impurity interaction
2Impurity states
2Indium Arsenides phosphides
2Indium Phosphides
2Indium arsenides
2Indium phosphides
2Inorganic compound
2MOVPE method
2Microelectronic fabrication
2Non radiative recombination
2Secondary ion mass spectrometry
2Theoretical study
2VPE
2Waveguide
1Absorption spectra
1Acceptors
1Angle of incidence
1Anharmonicity
1Binary compound
1Binary compounds
1Buried layer
1Cadmium additions
1Carbon
1Carbon additions
1Carrier density
1Charge carriers
1Chemical vapor deposition
1Complex defect
1Concentration distribution
1Crystal defect
1Crystal growth from vapors
1Dangling bond
1Dangling bonds
1Defect level
1Deuterium
1Diffusion
1Diffusion length
1Diffusion profile
1Distributed Bragg reflector lasers
1Donors
1Doping
1Electron density
1Electron mobility
1Emitting array
1Experiments
1Fiber optic networks
1Free carrier
1Free electron
1Gallium Arsenides
1Gallium phosphide
1Heterojunctions
1Hole mobility
1Hydrogen additions
1Hydrogen bonds
1Impurity density
1Impurity phonon interaction
1Indium Arsenides
1Indium Selenides
1Indium phosphide
1Infrared absorption
1Infrared reflection
1Infrared spectra
1Integrated optics
1Integrated optoelectronics
1Iron additions
1Lamellar compound
1Lattice vibrations
1Light absorption
1Light transmission
1Low pressure
1Measurement method
1Minority carrier
1Monolithic integrated circuit
1Neutralization
1Optical design techniques
1Optical planar waveguides
1Optical properties
1Optoelectronic device

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