Auteurs
Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Thedrez »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
B. Terrier < B. Thedrez < B. Thevenard  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000B20 (2004) MOVPE growth of A1GaInAs-InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers
000C91 (2003) Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 μm laser emission
000E87 (2002) Nitrures de faible gap épitaxiés sur substrat GaAs pour application optoélectronique : Croissance épitaxiale en phase vapeur aux organométalliques
000F61 (2002) Nitride-based long-wavelength lasers on GaAs substrates
001004 (2002) High temperature 10 Gbit/s directly modulated 1.3 μm DFB lasers using InAsP/InGaAsP materials
001056 (2002) 2.5-Gb/s transmission characteristics of 1.3-μm DFB lasers with external optical feedback
001F45 (1996) Extended tunability of a self-seeded gain-switched InGaAsP laser using an intracavity absorber

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Gallium arsenides
4MOVPE method
3III-V semiconductors
3Quantum well lasers
3Semiconducting indium compounds
3Semiconductor lasers
3Theory
2Crystal growth from vapors
2Distributed feedback lasers
2Epitaxy
2Experiments
2Gallium nitrides
2Indium arsenides
2Indium nitrides
2Laser diodes
2Laser modes
2Light transmission
2Molecular beam epitaxy
2Photoluminescence
2Quaternary compounds
2Semiconductor quantum wells
1Aluminium arsenides
1Arsenides
1Arsenides nitrides
1Barrier layer
1Chemical composition
1Coherence collapse
1Coherent light
1Current density
1Diffraction gratings
1Directly modulated multiple quantum well laser
1Epitaxial layers
1Feedback laser
1Gain measurement
1Gallium Arsenides nitrides
1Gas source molecular beam epitaxy
1Growth from vapor
1Heteroepitaxy
1Holography
1Indium Arsenides nitrides
1Indium arsenic phosphide
1Indium gallium arsenic phosphide
1Infrared laser
1Interfaces
1Ion implantation
1Laser materials
1Laser pulses
1Light absorption
1Light modulation
1Light polarization
1Light reflection
1Low pressure
1Multiple quantum well
1Nitrides
1Optical feedback
1Optical materials
1Organic arsine
1Organic hydrazine
1Precursor
1Proton implantation
1Protons
1Quantity ratio
1Quantum wells
1Quantum yield
1Separate confinement heterostructure
1Spectral tunability
1Stark effect
1Ternary compounds
1Tertiary arsine
1Threshold current
1VPE
1Voltage control

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "B. Thedrez" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Thedrez" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    B. Thedrez
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024