B. Seneclauze < B. Sermage < B. Servet

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
000D07 (2003)		Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots
001006 (2002)		High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001100 (2001-05-07)		Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks
001428 (2000)		Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
001671 (1999)		Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001838 (1998-08-15)		Photoluminescence study of the interface in type II InAlAs-InP heterostructures
001913 (1998)		Time-resolved photoluminescence study of GaInAs/AlGaInAs superlattices
001940 (1998)		Room-temperature continuous-wave operation VCSEL at 1.48 μm with Sb-based Bragg reflector
001A26 (1998)		CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001B15 (1997-06-16)		Type II recombination and band offset determination in a tensile strained InGaAs quantum well
001C75 (1997)		Exciton dynamics in quantum-well microcavities
001E00 (1996-05-27)		InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si
001F26 (1996)		InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications
001F28 (1996)		Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002454 (1994)		(NH4)2Sx passivation treatment and UVCVD stabilisation for GaInP/GaAs heterojunction bipolar transistors
002885 (1992)		High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasers
002A21 (1991)		High static performance GaInAs-GaInAsP SCH MQW 1.5 μm wavelength buried ridge stripe lasers
002A32 (1991)		First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
002A35 (1991)		Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002A38 (1991)		Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)
002B32 (1990)		Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires

---

List of associated KwdEn.i

Nombre de documents	Descripteur
15	Experimental study
11	Photoluminescence
7	Gallium arsenides
7	Semiconductor materials
6	Indium Phosphides
6	Semiconductor laser
5	Gallium Arsenides
5	Gallium Indium Arsenides Mixed
5	Indium arsenides
5	Multiple quantum well
4	Binary compounds
4	Heterojunction transistor
4	III-V semiconductors
4	Inorganic compound
4	Semiconductor quantum wells
4	Ternary compounds
3	Aluminium Gallium Arsenides Mixed
3	Aluminium Gallium Indium Arsenides Mixed
3	Aluminium arsenides
3	Doping
3	Excitons
3	Experiments
3	Gallium Indium Arsenides phosphides Mixed
3	Indium compounds
3	Luminescence decay
3	Molecular beam epitaxy
3	Semiconductor lasers
3	Time resolved spectra
2	Binary compound
2	Bipolar transistor
2	Bipolar transistors
2	Buried laser
2	Carbon additions
2	Crystal growth
2	Current density
2	Distributed feedback laser
2	Epitaxial layers
2	GRIN SCH laser
2	Hall effect
2	III-V compound
2	Indium Arsenides
2	Indium phosphides
2	Injection laser
2	Interface states
2	Lifetime
2	Microelectronic fabrication
2	Molecular beam condensation
2	Quantum wire
2	Radiative lifetimes
2	Scanning electron microscopy
2	Semiconducting gallium arsenide
2	Semiconductor growth
2	Semiconductor quantum dots
2	Ternary compound
2	Time resolution
1	Aluminium Gallium Antimonides arsenides Mixed
1	Aluminium Indium Arsenides Mixed
1	Aluminium antimonides
1	Aluminium compounds
1	Application
1	Auger recombination
1	BRS laser
1	Bragg reflectors
1	Bromides
1	CBE
1	CW lasers
1	Carbon addition
1	Cavities
1	Charge carrier concentration
1	Charge carrier recombination
1	Charge carrier trapping
1	Charge carriers
1	Chemical beam condensation
1	Chemical beam epitaxy
1	Chemical stabilization
1	Chemical vapor deposition
1	Composition effect
1	Confinement
1	Continuous wave
1	Continuous wave lasers
1	Crystal growth from vapors
1	Dielectric coating
1	Digital circuits
1	Distributed Bragg reflector lasers
1	Double heterojunction
1	Electron emission
1	Electron-hole recombination
1	Electronic properties
1	Epitaxy
1	Excitation spectrum
1	Excited states
1	Exciton
1	Fabrication property relation
1	Fitting
1	Free carrier
1	Gallium Antimonides
1	Gallium Indium Antimonides arsenides Mixed
1	Gallium Phosphides
1	Gallium alloys
1	Gallium antimonides

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "B. Sermage" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "B. Sermage" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    B. Sermage
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024