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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Salem »
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B. Salce < B. Salem < B. Satpati  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000238 (2011) Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
000330 (2010) Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000702 (2007) Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000788 (2006) Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000819 (2006) Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000914 (2005) Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000C38 (2003-05-15) Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots
000D00 (2003) Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
000E22 (2002-11-15) Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP(001)
000E48 (2002-07-01) Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000F55 (2002) Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates
001058 (2001-12-24) Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Photoluminescence
8III-V semiconductors
8Indium arsenides
7Molecular beam epitaxy
7Quantum dots
6Experimental study
5Indium compounds
5Self-assembly
4DLTS
4Self-assembled layers
4Semiconductor quantum dots
3Activation energy
3Aluminium arsenides
3Charge carrier trapping
3Excited states
3Ground states
3Indium phosphides
3Island structure
2Aluminium Indium Arsenides Mixed
2Aluminium compounds
2Atomic force microscopy
2Binary compounds
2CV characteristic
2Deep level
2Defect states
2Excitation spectrum
2Fluctuations
2Gallium arsenides
2Optical properties
2Optical transition
2Semiconductor growth
2Time resolved spectra
2Transmission electron microscopy
1Anisotropy
1Carrier density
1Charge carrier generation
1Continuous wave
1Coulomb interaction
1Depth profiles
1Digital simulation
1Dislocations
1Electron relaxation time
1Epitaxial layers
1Exchange interactions
1Growth mechanism
1High-speed optical techniques
1Infrared spectra
1Interlayers
1Line intensity
1Line widths
1Localized states
1Miniband
1Mismatch lattice
1Optical anisotropy
1Optical polarization
1Polarization
1Quantum wells
1Quantum wires
1Quenching
1Relaxation time
1Schroedinger equation
1Self organization
1Semiconductor epitaxial layers
1Semiconductor quantum wells
1Semiconductor quantum wires
1Solid-phase epitaxy
1Stacking sequence
1Strong coupling
1Superlattices
1Surface diffusion
1Surface reconstruction
1Surface treatments
1Temperature dependence
1Ternary compounds
1Thickness
1Time dependence
1Tunnel effect
1Two-level systems
1Ultrathin films
1Valence bands

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