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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « B. Rose »
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B. Roques < B. Rose < B. Rousseau  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
002103 (1995) Ultra-fast optical switching operation of DBR lasers using an electro-optical tuning section
002144 (1995) Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser
002207 (1995) Butt-jointed DBR laser with 15 nm tunability grown in three MOVPE steps
002675 (1993) Experimental study of the hydrogen complexes in indium phosphide
002855 (1992) Iron redistribution studies in adjacent acceptor-doped InP layers : application to a new SI-BH laser structure
002925 (1992) Chlorine assisted selective area epitaxy in AP-MOVPE of InP : influence of CCl4 on growth and on Zn and Si incorporation
002A67 (1991) Buried ridge stripe 1.5 μm GaInAsP/InP laser-waveguide integration by a simplified process
002A69 (1991) Application of AP MOVPE to a new butt-coupling scheme
002B59 (1990) GaInAsP/InP integrated ridge laser with a butt-jointed transparent optical waveguide fabricated by single-step metalorganic vapor-phase epitaxy
002C38 (1989) Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
002C39 (1989) Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
002C69 (1989) Hydrogen passivation of shallow acceptors in p-type InP
002F82 (1986) The growth and characterization of device quality InP/Ga1-xInxAsyP1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Indium Phosphides
9Experimental study
6Epitaxy
5Organometallic compound
5Semiconductor materials
4Inorganic compound
3Chemical vapor deposition
3Gallium Indium Arsenides Mixed
3Gallium Indium Arsenides phosphides Mixed
3Growth from vapor
3Semiconductor laser
3Silicon
3Zinc
2Acceptor center
2Butt joint
2Charge carrier concentration
2Distributed Bragg reflection
2Doping
2Double heterojunction
2Heterojunction
2Hydrogen
2III-V compound
2Indium phosphides
2Microelectronic fabrication
2Monolithic integrated circuit
2Multiple quantum well
2Optical waveguide
2Passivation
2Ridge waveguide
2Secondary ion mass spectrometry
2Thin film
1Absorption spectra
1Acceptors
1Active layer
1Anharmonicity
1Assay
1Beryllium additions
1Binary compound
1Buried laser
1Cadmium
1Cadmium additions
1Chemical etching
1Codoping
1Complex defect
1Coupled cavity laser
1Coupling
1Coupling coefficient
1Cross section
1Crystal growth
1Current-optical power characteristic
1Deuterium
1Diffusion
1Distributed feedback laser
1Electro-optical effects
1Electrooptical modulator
1Gallium arsenides
1Gallium phosphides
1Hall effect
1Hydrogen bonds
1Hydrogenation
1Impurity
1Impurity distribution
1Impurity pair
1Impurity phonon interaction
1Indium arsenides
1Indium phosphide
1Infrared absorption
1Infrared spectra
1Injection laser
1Integrated circuit
1Integrated optics
1Integrated optoelectronics
1Interstitial
1Iron
1Iron additions
1Kinetics
1Lamellar structure
1Laser
1Laser tuning
1Lattice vibrations
1Light source
1Manufacturing
1Operating mode
1Optical coupling
1Optical modulator
1Optical properties
1Optical telecommunication
1Optics
1Organometallics
1P type conductivity
1Periodic structure
1Phonon crystal defect interaction
1Photoluminescence
1Plasma
1Preparation
1Production process
1Scanning electron microscopy
1Semiconductor lasers
1Strained quantum well
1Superlattice

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